MC68HC912BD32CFU10 FREESCALE [Freescale Semiconductor, Inc], MC68HC912BD32CFU10 Datasheet - Page 78

• Manufacturer Part Number: MC68HC912BD32CFU10
• Description: Advance Information
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Programming the Flash EEPROM
Flash EEPROM
MC68HC912BD32 Rev 1.0
Programming the Flash EEPROM is accomplished by the following
sequence. The V
executing step 4 the first time.
The flowchart in
sequence.
10. If the location is programmed, repeat the same number of pulses
11. Read the address location to verify that it remains programmed.
12. Clear LAT.
13. If there are more locations to program, repeat steps 2 through 10.
14. Turn off V
1. Apply program/erase voltage to the V
2. Clear ERAS and set the LAT bit in the FEECTL register to
3. Write data to a valid address. The address and data is latched. If
4. Apply programming voltage by setting ENPE.
5. Delay for one programming pulse (t
6. Remove programming voltage by clearing ENPE.
7. Delay while high voltage is turning off (t
8. Read the address location to verify that it has been programmed
9. If the location is not programmed, repeat steps 4 through 7 until
Freescale Semiconductor, Inc.
For More Information On This Product,
establish program mode and enable programming address and
data latches.
BOOTP is asserted, an attempt to program an address in the boot
block will be ignored.
the location is programmed or until the specified maximum
number of program pulses has been reached (n
as required to program the location. This provides 100% program
margin.
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FP
Figure 7
FP
Flash EEPROM
(reduce voltage on V
pin voltage must be at the proper level prior to
demonstrates the recommended programming
FP
PPULSE
pin to V
FP
VPROG
pin.
).
DD
).
).
PP
)
10-flash