MC68HC912BD32CFU10 FREESCALE [Freescale Semiconductor, Inc], MC68HC912BD32CFU10 Datasheet - Page 91

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MC68HC912BD32CFU10

Manufacturer Part Number
MC68HC912BD32CFU10
Description
Advance Information
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
7-eeprom
EELAT — EEPROM Latch Control
EEPGM — Program and Erase Enable
It is possible to program/erase more bytes or words without intermediate
EEPROM reads, by jumping from step 5 to step 2.
1. Write BYTE, ROW and ERASE to the desired value, write EELAT
2. Write a byte or an aligned word to an EEPROM address
3. Write EEPGM = 1
4. Wait for programming (
5. Write EEPGM = 0
6. Write EELAT = 0
Configures the EEPROM for erasure or programming.
When test mode is not enabled and unless BULKP is set, erasure is
by byte, aligned word, row or bulk.
Read anytime. Write anytime if EEPGM = 0.
BYTE, ROW, ERASE and EELAT bits can be written simultaneously
or in any sequence.
The EEPGM bit can be set only after EELAT has been set. When
EELAT and EEPGM are set simultaneously, EEPGM remains clear
but EELAT is set.
The BULKP, BYTE, ROW, ERASE and EELAT bits cannot be
changed when EEPGM is set. To complete a program or erase, two
successive writes to clear EEPGM and EELAT bits are required
before reading the programmed data. A write to an EEPROM location
has no effect when EEPGM is set. Latched address and data cannot
be modified during program or erase.
Freescale Semiconductor, Inc.
A program or erase operation should follow the sequence below:
For More Information On This Product,
0 = EEPROM set up for normal reads.
1 = EEPROM address and data bus latches set up for
0 = Disables program/erase voltage to EEPROM.
1 = Applies program/erase voltage to EEPROM.
= 1
programming or erasing.
Go to: www.freescale.com
EEPROM
t
PROG
) or erase (
t
erase
EEPROM Control Registers
MC68HC912BD32 Rev 1.0
) delay time
EEPROM

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