MT48H16M16LFBF-75:H Micron Technology Inc, MT48H16M16LFBF-75:H Datasheet - Page 18

• Manufacturer Part Number: MT48H16M16LFBF-75:H
• Description: SDRAM 256M-BIT 1.8V 54-PIN VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4707290

Table 9: I
Notes 1, 5, 9, and 10 apply to all parameters and conditions; V
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Parameter/Condition
Self refresh:
CKE = LOW;
Address and control inputs are stable;
Data bus inputs are stable
DD7
t
CK =
Specifications and Conditions (x16 and x32)
t
CK (MIN);
Notes:
10. Values for I
1. A full initialization sequence is required before proper device operation is ensured.
2. I
3. The I
4. Address transitions average one transition every two clocks.
5. Measurement is taken 500ms after entering into this operating mode to provide tester
6. Other input signals can transition only one time for every two clocks and are otherwise
7. CKE is HIGH during REFRESH command period
8. Typical values at 25˚C (not a maximum value).
9. Enables on-die refresh and address counters.
minimum cycle time and the outputs open.
quency alteration for the test condition.
measuring unit settling time.
at valid V
is a nominal value and does not result in a fail value.
ture range. All other I
DD
is dependent on output loading and cycle rates. Specified values are obtained with
DD
current will increase or decrease proportionally according to the amount of fre-
IH
1/16 array, 85˚C
1/16 array, 45˚C
Full array, 85˚C
Full array, 45˚C
1/2 array, 85˚C
1/2 array, 45˚C
1/4 array, 85˚C
1/4 array, 45˚C
1/8 array, 85˚C
1/8 array, 45˚C
DD7
or V
85˚C full array and partial array are guaranteed for the entire tempera-
IL
levels.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
DD7
values are estimated.
18
DD
Electrical Specifications – I
/V
DDQ
= 1.70–1.95V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
t
RFC (MIN) else CKE is LOW. The I
I
300
190
250
150
230
130
220
120
200
110
DD7
©2008 Micron Technology, Inc. All rights reserved.
DD
Parameters
Unit
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
DD7
limit