MT48H16M16LFBF-75:H Micron Technology Inc, MT48H16M16LFBF-75:H Datasheet - Page 61

• Manufacturer Part Number: MT48H16M16LFBF-75:H
• Description: SDRAM 256M-BIT 1.8V 54-PIN VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4707290

Figure 32: Alternating Bank Write Accesses
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank 0
ACTIVE
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t RC - bank 0
t RRD
t CK
T1
Note:
NOP
Enable auto precharge
t CMS
t CL
1. For this example, BL = 4.
Column m
t DS
Bank 0
WRITE
T2
D
t CMH
IN
t DH
t CH
t DS
T3
NOP
D
IN
t DH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t DS
Bank 1
ACTIVE
Row
T4
Row
D
IN
t DH
61
t RCD - bank 1
t DS
T5
D
NOP
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR - bank 0
Enable auto precharge
t DS
Column b
Bank 1
WRITE
T6
D
IN
t DH
t DS
T7
NOP
D
IN
t DH
t RP - bank 0
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WRITE Operation
t DS
T8
NOP
D
IN
t DH
t DS
Bank 0
Row
Row
T9
ACTIVE
D
t RCD - bank 0
t WR - bank 1
IN
t DH
Don’t Care