MT48H16M16LFBF-75:H Micron Technology Inc, MT48H16M16LFBF-75:H Datasheet - Page 45

• Manufacturer Part Number: MT48H16M16LFBF-75:H
• Description: SDRAM 256M-BIT 1.8V 54-PIN VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 80mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4707290

Partial-Array Self Refresh
Output Drive Strength
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
For further power savings during self refresh, the partial-array self refresh (PASR) fea-
ture enables the controller to select the amount of memory to be refreshed during self
refresh. The refresh options are:
• Full array: banks 0, 1, 2, and 3
• One-half array: banks 0 and 1
• One-quarter array: bank 0
• One-eighth array: bank 0 with row address most significant bit (MSB) = 0
• One-sixteenth array: bank 0 with row address MSB = 0 and row address MSB - 1 = 0
READ and WRITE commands can still be issued to any bank selected during standard
operation, but only the selected banks or segments of a bank in PASR are refreshed dur-
ing self refresh. It is important to note that data in unused banks or portions of banks is
lost when PASR is used.
Because the device is designed for use in smaller systems that are typically point-to-
point connections, an option to control the drive strength of the output buffers is
provided. Drive strength should be selected based on the expected loading of the mem-
ory bus. There are four supported settings for the output drivers: 25Ω, 37Ω, 55Ω, and
80Ω internal impedance. These are full, three-quarter, one-half, and one-quarter drive
strengths, respectively.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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