STM32F101V8T6 STMicroelectronics, STM32F101V8T6 Datasheet - Page 51

MCU ARM 64KB FLASH/TIMER 100LQFP

STM32F101V8T6

Manufacturer Part Number
STM32F101V8T6
Description
MCU ARM 64KB FLASH/TIMER 100LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F101V8T6

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
80
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Processor Series
STM32F101x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
10 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
36 MHz
Number Of Programmable I/os
100
Number Of Timers
3 x 16 bit
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 16 Channel
For Use With
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Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
497-6060
STM32F101x8, STM32F101xB
Functional EMS (Electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
through a 100 pF capacitor, until a functional disturbance occurs. This test is
SS
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 29.
EMS characteristics
Symbol
Voltage limits to be applied on any I/O pin to
V
FESD
induce a functional disturbance
Fast transient voltage burst limits to be
V
applied through 100 pF on V
EFTB
to induce a functional disturbance
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second. To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
Table
29. They are based on the EMS levels and classes
Parameter
V
DD
f
HCLK
conforms to IEC 61000-4-2
V
DD
and V
pins
f
DD
SS
HCLK
conforms to IEC 61000-4-4
Doc ID 13586 Rev 14
Electrical characteristics
and
DD
Conditions
Level/Class
= 3.3 V, T
= +25 °C,
A
= 36 MHz
2B
= 3.3 V, T
= +25 °C,
A
= 36 MHz
4A
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