R5F61668RN50FPV Renesas Electronics America, R5F61668RN50FPV Datasheet - Page 1237

• Manufacturer Part Number: R5F61668RN50FPV
• Description: IC H8SX/1668 MCU FLASH 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61668RN50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 56K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: R0K561668S000BE - KIT STARTER FOR H8SX/1668R0K561664S001BE - KIT STARTER FOR H8SX/1651HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

25.14
1. The initial state of the product at its shipment is in the erased state. For the product whose
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
3. If the socket, socket adapter, or product index of the PROM programmer do not match the
4. Use a PROM programmer that supports the device with 1-Mbyte on-chip flash memory and
5. Do not turn off the Vcc power supply nor remove the chip from the PROM programmer during
6. The flash memory is not accessible until FKEY is cleared after programming/erasure starts. If
7. At powering on or off the Vcc power supply, fix the RES pin to low and set the flash memory
8. In on-board programming mode or programmer mode, programming of the 128-byte
9. When the chip is to be reprogrammed with the programmer after execution of programming or
10. To program the flash memory, the program data and program must be allocated to addresses
11. The programming program that includes the initialization routine and the erasing program that
revision of erasing is undefined, we recommend to execute automatic erasure for checking the
initial state (erased state) and compensating.
refer to the instruction manual of the socket adapter.
specifications, too much current flows and the product may be damaged.
3.3-V programming voltage. Use only the specified socket adapter.
programming/erasure in which a high voltage is applied to the flash memory. Doing so may
damage the flash memory permanently. If a reset is input, the reset must be released after the
reset input period of at least 100ms.
the operating mode is changed and this LSI is restarted by a reset immediately after
programming/erasure has finished, secure the reset input period (period of RES = 0) of at least
100µs. Transition to the reset state during programming/erasure is inhibited. If a reset is input
accidentally, the reset must be released after the reset input period of at least 100µs.
to hardware protection state. This power on/off timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
programming-unit block must be performed only once. Perform programming in the state
where the programming-unit block is fully erased.
erasure in on-board programming mode, it is recommended that automatic programming is
performed after execution of automatic erasure.
which are higher than those of the external interrupt vector table and H'FF must be written to
all the system reserved areas in the exception handling vector table.
includes the initialization routine are each 4 Kbytes or less. Accordingly, when the CPU clock
frequency is 35 MHz, the download for each program takes approximately 60 µs at the
maximum.
Usage Notes
Rev. 2.00 Sep. 24, 2008 Page 1203 of 1468
Section 25 Flash Memory
REJ09B0412-0200