K4T1G164QE-HCE6000 Samsung Semiconductor, K4T1G164QE-HCE6000 Datasheet - Page 5

• Manufacturer Part Number: K4T1G164QE-HCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCE6000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

K4T1G084QE
K4T1G164QE
3.0 Package Pinout/Mechanical Dimension & Addressing
K4T1G044QE
Note : V
DQ
DDL
G
A
B
C
D
E
F
H
K
L
J
, V
and V
SS
, and V
3.1 x4 package pinout (Top View) : 60ball FBGA Package
Top view
(See the balls through package)
Ball Locations (x4)
SSDL
V
V
BA2
V
V
V
NC
NC
DDQ
DDL
1
DD
SS
DD
Populated ball
Ball not populated
SSQ
are power and ground for the DLL. It is recommended that they be isolated on the device from V
.
A10/AP
V
V
V
CKE
DQ1
BA0
A12
NC
A3
A7
SSQ
SSQ
REF
2
V
DQ3
BA1
V
V
DM
WE
NC
A1
A5
A9
DDQ
3
SS
SS
5 of 45
4
5
A
B
C
D
E
G
H
K
F
J
L
6
1
V
V
V
DQS
DQ2
RAS
CAS
A11
SSDL
NC
2
A2
A6
SSQ
DDQ
7
3
4
V
V
DQS
DQ0
5
A13
CK
CK
CS
A0
A4
A8
SSQ
SSQ
8
6
7
8
ODT0
V
V
V
V
V
NC
NC
DDQ
DDQ
Rev. 1.1 December 2008
9
DD
DD
SS
9
DDR2 SDRAM
DD
,V
D-