ST72T511R9T6 STMicroelectronics, ST72T511R9T6 Datasheet - Page 143

• Manufacturer Part Number: ST72T511R9T6
• Description: Microcontrollers (MCU) UV EPROM 60K SPI/SCI
• Manufacturer: STMicroelectronics

Specifications of ST72T511R9T6

• Data Bus Width: 8 bit
• Program Memory Type: EEPROM
• Program Memory Size: 60 KB
• Data Ram Size: 2048 B
• Interface Type: CAN, SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 48
• Number Of Timers: 5
• Operating Supply Voltage: 3 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TQFP-64
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit
• Lead Free Status / Rohs Status: No

EMC CHARACTERISTICS (Cont’d)
12.7.3 ESD Pin Protection Strategy
To protect an integrated circuit against Electro-
Static Discharge the stress must be controlled to
prevent degradation or destruction of the circuit el-
ements. The stress generally affects the circuit el-
ements which are connected to the pads but can
also affect the internal devices when the supply
pads receive the stress. The elements to be pro-
tected must not receive excessive current, voltage
or heating within their structure.
An ESD network combines the different input and
output ESD protections. This network works, by al-
lowing safe discharge paths for the pins subjected
to ESD stress. Two critical ESD stress cases are
presented in Figure 77 and Figure 78 for standard
pins and in Figure 79 and Figure 80 for true open
drain pins.
Figure 77. Positive Stress on a Standard Pad vs. V
Figure 78. Negative Stress on a Standard Pad vs. V
Main path
Path to avoid
Main path
V
V
V
V
DD
DD
SS
SS
(3a)
(3b)
(3a)
(3b)
OUT
OUT
ST72311R, ST72511R, ST72512R, ST72532R
SS
Standard Pin Protection
To protect the output structure the following ele-
ments are added:
To protect the input structure the following ele-
ments are added:
DD
– A diode to V
– A protection device between V
– A resistor in series with the pad (1)
– A diode to V
– A protection device between V
(4)
(4)
IN
IN
DD
DD
(3a) and a diode from V
(2a) and a diode from V
(2a)
(2b)
(2a)
(2b)
(1)
(1)
DD
DD
and V
and V
143/164
SS
SS
SS
SS
V
V
V
V
DD
SS
DD
SS
(3b)
(2b)
(4)
(4)