NAND04GW3B2AN1F NUMONYX [Numonyx B.V], NAND04GW3B2AN1F Datasheet - Page 11

• Manufacturer Part Number: NAND04GW3B2AN1F
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04GW3B2B, NAND08GW3B2A
2
2.1
Memory array organization
The memory array is made up of NAND structures where 32 cells are connected in series.
The memory array is organized in blocks where each block contains 64 pages. The array is
split into two areas, the main area and the spare area. The main area of the array is used to
store data whereas the spare area is typically used to store Error correction Codes, software
flags or Bad Block identification.
The pages are split into a 2048 Byte main area and a spare area of 64 Bytes. Refer to
Figure 4: Memory Array
Bad Blocks
The NAND Flash 2112 Byte/ 1056 Word Page devices may contain Bad Blocks, that is
blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional
Bad Blocks may develop during the lifetime of the device.
The Bad Block Information is written prior to shipping (refer to
Management
Table 3
Blocks that are present when the device is shipped and the Bad Blocks that could develop
later on.
These blocks need to be managed using Bad Blocks Management, Block Replacement or
Error Correction Codes (refer to
Table 3.
1. The NAND08GW3B2A is composed of two 4 Gbit dice.
shows the minimum number of valid blocks. The values shown include both the Bad
Density of Device
Valid Blocks
8 Gbits
for more details).
4 Gbits
(1)
Organization.
Section 8: Software
4016
8032
Min
algorithms).
Section 8.1: Bad Block
Memory array organization
4096
8192
Max
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