NAND04GW3B2AN1F NUMONYX [Numonyx B.V], NAND04GW3B2AN1F Datasheet - Page 54

• Manufacturer Part Number: NAND04GW3B2AN1F
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
11.2
54/58
Figure 35. Resistor Value Versus Waveform Timings For Ready/Busy Signal
1. T = 25°C.
Data Protection
The Numonyx NAND device is designed to guarantee Data Protection during Power
Transitions.
A V
In the V
low (V
figure.
Figure 36. Data Protection
DD
IL
detection circuit disables all NAND operations, if V
) to guarantee hardware protection during power transitions as shown in the below
DD
V DD
W
range from V
Nominal Range
400
300
200
100
0
V LKO
1
LKO
100
3.6
Locked
2.4
t f
to the lower limit of nominal range, the WP pin should be kept
V DD = 3.3V, C L = 100pF
2
3.6
200
1.2
R P (K
t r
3
300
3.6
0.8
Locked
ibusy
NAND04GW3B2B, NAND08GW3B2A
400
4
DD
3.6
2
1
3
4
0.6
is below the V
Ai11086
LKO
threshold.
ai12476