NAND04GW3B2AN1F NUMONYX [Numonyx B.V], NAND04GW3B2AN1F Datasheet - Page 8

• Manufacturer Part Number: NAND04GW3B2AN1F
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: NUMONYX [Numonyx B.V]

Description
Table 1.
1. The NAND08GW3B2A is composed of two 4 Gbit dice.
Figure 1.
8/58
NAND04GW3B2B
NAND08GW3B2A
Part Number
PRL
WP
CL
AL
For information on how to order these options refer to
Scheme. Devices are shipped from the factory with Block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See
Product Description
Logic Block Diagram
W
E
R
Density
Table 1: Product
4 Gb
8 Gb
Command Register
Register/Counter
Command
Width
Interface
Address
Bus
Logic
x8
x8
2048+
Bytes
Page
Size
64
Description, for all the devices available in the family.
Block
Bytes
128K
Size
+4K
RB
P/E/R Controller,
High Voltage
Pages x
Pages x
y Array
Memor
Generator
Blocks
Blocks
4096
8192
64
64
Operating
Voltage
2.7 to
3.6V
Random
access
(max)
25µs
25µs
time
NAND04GW3B2B, NAND08GW3B2A
I/O Buffers & Latches
Table 23: Ordering Information
Cache Register
Page Buffer
Y Decoder
Memory Array
I/O0-I/O7
Sequential
time (min)
NAND Flash
access
30ns
30ns
Timings
Program
200µs
200µs
Page
(typ)
Erase
Block
(typ)
2ms
2ms
AI12465
Package
TSOP48
TSOP48
(1)