NAND04GW3B2AN1F NUMONYX [Numonyx B.V], NAND04GW3B2AN1F Datasheet - Page 41

• Manufacturer Part Number: NAND04GW3B2AN1F
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04GW3B2B, NAND08GW3B2A
10
Maximum rating
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 16.
1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
Symbol
T
V
T
V
BIAS
IO
STG
DD
(1)
Absolute Maximum Ratings
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Parameter
DD
+ 2V for less than 20ns during transitions on I/O pins.
Table 16: Absolute Maximum
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
125
150
4.6
4.6
Maximum rating
Ratings, may
Unit
°C
°C
V
V
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