NAND04GW3B2AN1F NUMONYX [Numonyx B.V], NAND04GW3B2AN1F Datasheet - Page 43

• Manufacturer Part Number: NAND04GW3B2AN1F
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04GW3B2B, NAND08GW3B2A
Figure 20. Equivalent Testing Circuit for AC Characteristics Measurement
Table 19.
1. leakage current and standby current double in stacked devices.
I
Symbol
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
V
DC Characteristics
DD
Standby Current (CMOS)
Output Leakage Current
Output High Voltage Level
Parameter
Output Low Voltage Level
Output Low Current (RB)
Operating
Input Leakage Current
Standby current (TTL)
Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Sequential
Program
Erase
Read
NAND Flash
(1)
(1)
(1)
(1)
V
E=V
E=V
C L
V
Test Conditions
OUT
t
IN
RLRL
I
OH
I
E=V
= 0 to V
WP=0/V
OL
V
IL,
IH
= 0 to V
GND
OL
, WP=0/V
I
= -400µA
= 2.1mA
OUT
minimum
DD
= 0.4V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
DD
V DD
GND
0.8V
2R ref
2R ref
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
DD
Ai11085
DC and AC parameters
Typ
15
15
15
10
10
-
-
-
-
-
-
-
V
0.2V
DD
Max
±10
±10
0.4
1.7
30
30
30
50
1
-
+0.3
DD
Unit
43/58
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V