NAND04GW3B2AN1F NUMONYX [Numonyx B.V], NAND04GW3B2AN1F Datasheet - Page 48

• Manufacturer Part Number: NAND04GW3B2AN1F
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
Figure 25. Read Status Register AC Waveform
Figure 26. Read Electronic Signature AC Waveform
1. Refer to
48/58
contained in Byte 3 and Byte 4.
I/O
CL
AL
CL
I/O
W
W
E
R
E
R
Table 10
for the values of the Manufacturer and Device Codes, and to
Read Electronic
90h
Command
Signature
tCLHWH
(Data Setup time)
tELWH
tDVWH
1st Cycle
Address
tALLRL1
00h
(Read ES Access time)
70h
tRLQV
tWLWH
(Data Hold time)
tWHDX
tWHCLL
tWHEH
Byte1
tDZRL
Man.
code
tWHRL
tCLLRL
Device
code
tRLQV
Byte2
tELQV
NAND04GW3B2B, NAND08GW3B2A
Table 11
Byte3
Status Register
see Note.1
and
tEHQZ
tRHQZ
Output
Table 12
Byte4
for the information
ai12473
ai08667