HYB18T512160AF INFINEON [Infineon Technologies AG], HYB18T512160AF Datasheet - Page 112
HYB18T512160AF
Manufacturer Part Number
HYB18T512160AF
Description
512-Mbit DDR2 SDRAM
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
1.HYB18T512160AF.pdf
(117 pages)
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Quantity
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Part Number:
HYB18T512160AF
Manufacturer:
Infineon
Quantity:
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HYB18T512160AF-15
Manufacturer:
INFINEON/英飞凌
Quantity:
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Table 59
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1) All units in ps.
2) For all input signals
Table 60
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1) All units in ps.
2) For all input signals
Data Sheet
DQS, DQS Differential Slew Rate
4.0 V/ns
t
+100 +45 +100 +45 +100 +45 —
+67
0
—
—
—
—
—
—
DQS, DQS Differential Slew Rate
4.0 V/ns
t
+125 +45 +125 +45 +125 +45 —
+83
0
—
—
—
—
—
—
DS
DS
Derating Values for Data Setup and Hold Time of Differential DQS (DDR2-667)
Derating Values for Data Setup and Hold Time of Differential DQS (DDR2-400 & -533)
t
+21 +67
0
—
—
—
—
—
—
t
+21 +83
0
—
—
—
—
—
—
DH
DH
3.0 V/ns
t
0
–5
—
—
—
—
—
3.0 V/ns
t
0
–11
—
—
—
—
—
DS
DS
t
t
DS
DS
(total) =
(total) =
t
+21 +67
0
–14 –5
—
—
—
—
—
t
+21 +83
0
–14 –11
—
—
—
—
—
DH
DH
2.0 V/ns
t
0
–13
—
—
—
—
2.0 V/ns
t
0
–25
—
—
—
—
DS
DS
t
t
DS
DS
(base) +
(base) +
t
+21 +97 +33 —
0
–14 +7
–31 –1
—
—
—
—
t
+21 +95 +33 —
0
–14 +1
–31 –13 –19 –1
—
—
—
—
DH
DH
1)2)
1)2)
1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns
t
+12 +12 +24 +24 —
–10 –42 +2
—
—
—
1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns
t
+12 +12 +24 +24 —
–31 –42 –19 –30 –7
—
—
—
DS
DS
t
t
DS
DS
and
and
t
—
–2
–19 +11 –7
—
—
—
t
—
–2
—
—
—
DH
DH
t
t
DH
DH
t
—
+19 +10 +31 +22 —
–10 –59 +2
—
—
t
—
+13 +10 +25 +22 —
–43 –59 –31 –47 –19
—
—
DS
DS
(total) =
(total) =
112
t
—
—
–30 +14 –18 +26
—
—
t
—
—
–7
—
—
DH
DH
t
t
DH
DH
t
—
—
+23 +5
–24 –89 –12
—
t
—
—
+11 +5
–74 –89 –62
—
(base) +
(base) +
DS
DS
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
t
—
—
—
–47 +14
—
t
—
—
—
–18 +5
—
DH
DH
t
t
AC Timing Measurement Conditions
t
—
—
—
+35
–52
DH
t
—
—
—
+23
–127 –140 –115 –128 –103 –116
DH
DS
DS
t
—
—
—
—
+17
–6
–35
–77
–140 –20
t
—
—
—
—
+17
–6
–35
–77
DH
DH
512-Mbit DDR2 SDRAM
1.0 V/ns
t
—
—
—
—
—
+38
+26
0
1.0 V/ns
t
—
—
—
—
—
+17
–7
–50
DS
DS
09112003-SDM9-IQ3P
t
—
—
—
—
—
+6
–23
–65
–28
t
—
—
—
—
—
+6
–23
–65
DH
DH
Rev. 1.3, 2005-01
0.8 V/ns
t
—
—
—
—
—
—
+538 –11
+12
–28
0.8 V/ns
t
—
—
—
—
—
—
+5
–38
DS
DS
—
—
—
–53
—
—
—
–11
–53
t
—
—
—
–116
t
—
—
—
DH
DH
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