HYB18T512160AF INFINEON [Infineon Technologies AG], HYB18T512160AF Datasheet - Page 20

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HYB18T512160AF

Manufacturer Part Number
HYB18T512160AF
Description
512-Mbit DDR2 SDRAM
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB18T512160AF
Manufacturer:
Infineon
Quantity:
885
Part Number:
HYB18T512160AF-15
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
2.1
Figure 1
Note:
1.
Data Sheet
V
DLL.They are isolated on the device from
V
DDL
DDQ
,
and
V
SS
TFBGA Ball Out Diagrams
Pin Configuration for 4 components, P-TFBGA-60 (top view)
V
, and
SSDL
V
are power and ground for the
SSQ
V
DD
,
20
2. Ball position L8 is A13 for 512-Mbit and is Not
Connected on 256-Mbit
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Pin Configuration and Block Diagrams
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01

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