HYB18T512160AF INFINEON [Infineon Technologies AG], HYB18T512160AF Datasheet - Page 48

• Manufacturer Part Number: HYB18T512160AF
• Description: 512-Mbit DDR2 SDRAM
• Manufacturer: INFINEON [Infineon Technologies AG]

Figure 21
Activate to Read delay =
Figure 22
Activate to Read delay >
Figure 23
AL = 2, CL = 3, RL = 5, WL = 4,
Data Sheet
CK, CK
CK, CK
CMD
CMD
DQS,
DQS
DQ
DQS,
DQS
DQ
Read to Write Timing Example: Read followed by a write to the same bank
Read to Write Timing Example: Read followed by a write to the same bank
Write to Read Timing Example: Write followed by a read to the same bank
Activate
Activate
Bank A
Bank A
CK, CK
DQS,
DQS
CMD
DQ
0
0
1
1
tRCD > tRCDmin.
tRCD > tRCDmin.
Activate
Bank A
0
t
t
RCD.MIN
RCD.MIN
2
2
1
tRCD
t
: AL = 0, CL = 3, RL = (AL + CL) = 3, WL = (RL -1) = 2, BL = 4
: AL = 1, CL = 3, RL = 4, WL = 3, BL = 4
WTR
3
3
2
= 2, BL = 4
Bank A
Bank A
Read
Read
4
4
AL = 0
Bank A
Read
3
RL = AL + CL = 3
5
5
4
RL = 4
RL = 4
CL = 3
6
6
5
48
7
7
6
Dout0
Write
Bank A
Write
Bank A
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Dout1
8
8
Bank A
Dout0
Dout0
Write
7
Dout2
WL = 3
WL = 3
Dout1
Dout1
WL = RL -1 = 2
9
9
Dout3
Dout2
Dout2
8
Dout3
Dout3
10
10
Din0
9
512-Mbit DDR2 SDRAM
Din1
11
Din0 Din1
11
Din0 Din1
10
Din2
Functional Description
09112003-SDM9-IQ3P
12
12
Din3
Din2
Din2
PostCAS5
PostCAS5
11
D in3
D in3
Rev. 1.3, 2005-01
PostCAS2
13
13