HYB18T512160AF INFINEON [Infineon Technologies AG], HYB18T512160AF Datasheet - Page 88

• Manufacturer Part Number: HYB18T512160AF
• Description: 512-Mbit DDR2 SDRAM
• Manufacturer: INFINEON [Infineon Technologies AG]

Figure 69
5.7
Table 40
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
Data Sheet
Reduced Strength Default Pull–down Driver Diagram
Input / Output Capacitance
Input / Output Capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance,
DQ, DM, DQS, DQS, RDQS, RDQS
Input/output capacitance delta,
DQ, DM, DQS, DQS, RDQS, RDQS
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
0
0,2
0,2
0,4
0,4
0,6
0,6
VOUT to VSSQ (V)
0,8
VOUT to VSSQ (V)
0,8
1
1
1,2
1,2
88
1,4
1,4
1,6
1,6
DDR2-400 &
DDR-2-533
Min.
1.0
—
1.0
—
2.5
—
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
1,8
1,8
2
Max.
2.0
0.25
2.0
0.25
4.0
0.5
2
Minimum
Nominal Default Low
No
Maximum
AC & DC Operating Conditions
Minimum
IBIS Target Low
IBIS Target High
Maximum
512-Mbit DDR2 SDRAM
DDR2-667
Min.
1.0
—
1.0
—
2.5
—
09112003-SDM9-IQ3P
Max.
2.0
0.25
2.0
0.25
3.5
0.5
Rev. 1.3, 2005-01
Unit
pF
pF
pF
pF
pF
pF