28F640W30 NUMONYX [Numonyx B.V], 28F640W30 Datasheet - Page 78
28F640W30
Manufacturer Part Number
28F640W30
Description
Numonyx Wireless Flash Memory (W30)
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.28F640W30.pdf
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Figure 36: Protection Register Locking
13.3
Figure 37: Examples of VPP Power Supply Configurations
Note:
Datasheet
78
If the V
CC
VPP Protection
The Product Name provides in-system program and erase at V
programming, the W30 flash memory device also includes a low-cost, backward-
compatible 12 V programming
EFP feature can also be used to greatly improve factory program performance, as
explained in
In addition to flexible block locking, holding the V
provide hardware write protection of all flash-device blocks. If V
program or erase operations result in an error displayed in SR[3]. (See
supply can sink adequate current, you can use an appropriately valued resistor.
12 V fast programming
Absolute write protection with V
Low voltage and 12 V fast programming
System supply
12 V supply
System supply
12 V supply
(Note 1)
10K
Section 11.3, “Enhanced Factory Program (EFP)” on page
0x88
0x85
0x84
0x81
0x80
VCC
VPP
VCC
VPP
15 14 13 12 11 10 9
PP
V
feature.(See “Factory Programming” on page
Intel Factory-Programmed
PPLK
User-Programmable
PR Lock Register 0
8
Low-voltage programming
Absolute write protection via logic signal
Low-voltage programming
7
System supply
Prot# (logic signal)
System supply
6
5
4
PP
3
Numonyx™ Wireless Flash Memory (W30)
Numonyx™ Wireless Flash Memory (W30)
2
programming voltage low can
1
0
VCC
VPP
VCC
VPP
PPL
PP
. For factory
Order Number: 290702-13
is below V
61.
Figure
November 2007
60.) The
PPLK
37.)
,
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