28F640W30 NUMONYX [Numonyx B.V], 28F640W30 Datasheet - Page 9

• Manufacturer Part Number: 28F640W30
• Description: Numonyx Wireless Flash Memory (W30)
• Manufacturer: NUMONYX [Numonyx B.V]

Numonyx™ Wireless Flash Memory (W30)
2.0
2.1
November 2007
Order Number: 290702-13
Functional Overview
This section provides an overview of the W30 flash memory device features and
architecture.
Overview
The W30 flash memory device provides Read-While-Write (RWW) and Read-White-
Erase (RWE) capability. This capability provides high-performance synchronous and
asynchronous reads in package-compatible densities using a 16-bit data bus.
Individually-erasable memory blocks are optimally sized for code and data storage.
Eight 4-Kword parameter blocks are located in the parameter partition at either the top
or bottom of the memory map. The rest of the memory array is grouped into 32-Kword
main blocks.
The memory architecture for the W30 flash memory device consists of multiple 4-Mbit
partitions, the exact number depending on the flash device density. By dividing the
memory array into partitions, program or erase operations can take place
simultaneously during read operations. Burst reads can traverse partition boundaries,
but user application code is responsible for ensuring that burst reads do not extend into
a partition that is actively programming or erasing. Although each partition has burst-
read, write, and erase capabilities, simultaneous operation is limited to write or erase in
one partition while other partitions are in a read mode.
Augmented erase-suspend functionality further enhances the RWW capabilities of the
W30 flash memory device. An erase can be suspended to perform a program or read
operation within any block, except a block that is erase-suspended. A program
operation nested within a suspended erase can subsequently be suspended to read yet
another memory location.
After power-up or reset, the W30 flash memory device defaults to asynchronous read
configuration. Writing to the flash memory device Read Configuration Register (RCR)
enables synchronous burst-mode read operation. In synchronous mode, the CLK input
increments an internal burst address generator. CLK also synchronizes the flash
memory device with the host CPU and outputs data on every, or on every other, valid
CLK cycle after an initial latency. A programmable WAIT output signals to the CPU when
data from the flash memory device is ready.
In addition to its improved architecture and interface, the W30 flash memory device
incorporates Enhanced Factory Programming (EFP), a feature that enables fast
programming and low-power designs. The EFP feature provides fast program
performance, which can increase the manufacturing throughput of a factory.
The W30 flash memory device supports read operations at 1.8 V and erase and
program operations at 1.8 V or 12 V. With the 1.8-V option, VCC and VPP can be tied
together for an ultra-low-power design. In addition to voltage flexibility, the dedicated
VPP input provides extensive data protection when V
A 128-bit protection register can implement new security techniques and data
protection schemes:
• A combination of factory-programmed and user-OTP data cells provide unique flash
• Zero-latency locking/unlocking on any memory block provides instant and
• An additional block lock-down capability provides hardware protection where
device identification, help implement fraud or cloning prevention schemes, or help
protect content.
complete protection for critical system code and data.
software commands alone cannot change the block protection status.
PP
V
PPLK
.
Datasheet
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