MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 76

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 55:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
A0–A9, A11
COMMAND
BA0, BA1
CKE
A10
CLK
DQ
Write – Full-page Burst
t CMS
t CKS
Notes:
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t CK
t RCD
1. x16: A9 and A11 = “Don’t Care.”
2.
3. Page left open; no
x32: A8, A9, and A11 = “Don’t Care.”
t
See Table 17 on page 53.
WR must be satisfied prior to PRECHARGE command.
T1
NOP
t CMS
t CL
t DS
COLUMN m 1
D
T2
WRITE
BANK
IN
t CMH
m
t CH
t DH
t
RP.
t DS
D
IN
T3
NOP
m + 1
t DH
76
512 (x16) locations within same row
t DS
D
IN
T4
NOP
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
128Mb: x16, x32 Mobile SDRAM
IN
T5
m + 3
NOP
t DH
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t DS
D
Tn + 1
IN
NOP
m - 1
t DH
©2001 Micron Technology, Inc. All rights reserved.
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
command to stop.
Timing Diagrams
BURST TERM
Tn + 2
DON’T CARE
2, 3
Tn + 3
NOP