SAM7S16 Atmel Corporation, SAM7S16 Datasheet - Page 626

• Manufacturer Part Number: SAM7S16
• Manufacturer: Atmel Corporation

Specifications of SAM7S16

• Flash (kbytes): 16 Kbytes
• Pin Count: 48
• Max. Operating Frequency: 55 MHz
• Cpu: ARM7TDMI
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 21
• Ext Interrupts: 21
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Uart: 2
• Ssc: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 384
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 4
• Self Program Memory: NO
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8/3.3
• Operating Voltage (vcc): 3.0 to 3.6
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 3
• Output Compare Channels: 3
• Input Capture Channels: 3
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: No

40.7.2.11
40.7.3
40.7.3.1
40.7.4
40.7.4.1
40.7.4.2
626
SAM7S Series
Non Volatile Memory Bits (NVM Bits)
Parallel Input/Output Controller (PIO)
ADC: Sleep Mode
NVM Bits: Write/Erase Cycles Number
PIO: Leakage on PA17 - PA20
PIO: Electrical Characteristics on NRST and PA0-PA16 and PA21-31
None.
If Sleep mode is activated while there is no activity (no conversion is being performed), it will
take effect only after a conversion occurs.
To activate sleep mode as soon as possible, it is recommended to write successively, ADC
Mode Register (SLEEP) then ADC Control Register (START bit field); to start an analog-to-digi-
tal conversion, in order put ADC into sleep mode at the end of this conversion.
The maximum number of write/erase cycles for Non Volatile Memory bits is 100. This includes
Lock Bits (LOCKx), General Purpose NVM bits (GPNVMx) and the Security Bit.
This maximum number of write/erase cycles is not applicable to 256 KB Flash memory, it
remains at 10K for the Flash memory.
None.
When PA17, PA18, PA19 or PA20 (the I/O lines multiplexed with the analog inputs) are set as
digital inputs with pull-up disabled, the leakage can be 9 µA in worst case and 90 nA in typical
case per I/O when the I/O is set externally at low level.
Set the I/O to VDDIO by internal or external pull-up.
When NRST or PA0-PA16 or PA21-PA31 are set as digital inputs with pull-up enabled, the volt-
age of the I/O stabilizes at VPull-up.
Vpull-up
This condition causes a leakage through VDDIO. This leakage is 45 µA per pad in worst case at
3.3 V and 25 µA at 1.8V.
I Leakage
VPull-up Min
VDDIO - 0.65 V
Parameter
I Leakage at 3,3V
I Leakage at 1.8V
Problem Fix/Workaround
Problem Fix/Workaround
Problem Fix/Workaround
Problem Fix/Workaround
VPull-up Max
VDDIO - 0.45 V
Typ
2.5
1
µA
µA
Max
45
25
µA
µA
6175L–ATARM–28-Jul-11