LPC2925 NXP Semiconductors, LPC2925 Datasheet - Page 69

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LPC2925

Manufacturer Part Number
LPC2925
Description
(LPC2921 - LPC2925) ARM9 microcontroller
Manufacturer
NXP Semiconductors
Datasheet

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Table 36.
V
ground.
[1]
LPC2921_2923_2925_0
Preliminary data sheet
Symbol
N
t
t
t
t
t
t
t
t
ret
prog
er
init
wr(pg)
fl(BIST)
a(clk)
a(A)
DD(CORE)
www.DataSheet4U.com
endu
All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
temperature on wafer level. Cased products are tested at T
test conditions to cover the specified temperature and power supply voltage range.
[1]
= V
Flash characteristics
DD(OSC_PLL)
Parameter
endurance
retention time
programming time
erase time
initialization time
page write time
flash word BIST time
clock access time
address access time
9.5 Dynamic characteristics: flash memory
; V
DD(IO)
= 2.7 V to 3.6 V; V
Conditions
number of
program/erase cycles
average T
word
page
global
sector
Rev. 00.01 — 24 October 2008
DDA(ADC3V3)
amb
= 85 °C
amb
= 25 °C (final testing). Both pre-testing and final testing use correlated
= 3.0 V to 3.6 V; all voltages are measured with respect to
ARM9 microcontroller with CAN and LIN
Min
10,000
10
-
-
-
95
-
0.95
-
-
-
LPC2921/2923/2925
Typ
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
100
-
1
38
-
-
Max
<tbd>
20
<tbd>
<tbd>
<tbd>
105
150
1.05
70
63.4
60.3
© NXP B.V. 2008. All rights reserved.
amb
= 125 °C ambient
ms
ms
Unit
cycles
years
μs
ms
μs
ms
ns
ns
ns
69 of 81

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