m52d128168a Elite Semiconductor Memory Technology Inc., m52d128168a Datasheet - Page 3

• Manufacturer Part Number: m52d128168a
• Description: 2m X 16 Bit X 4 Banks Mobile Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ABSOLUTE MAXIMUM RATINGS
Note:
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to V
Note:
CAPACITANCE
Elite Semiconductor Memory Technology Inc.
(CLK, CKE, CS , RAS , CAS , WE &
L(U)DQM)
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance
Data input/output capacitance (DQ0 ~ DQ15)
PARAMETER
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. D
IH
IL
out
PARAMETER
DD
(min) = -1.0V AC for pulse width
(max) = 2.2V AC for pulse width
is disabled, 0V
supply relative to V
PARAMETER
(V
DD
= 1.8V, T
≤
V
IN
≤
SS
≤
V
A
SYMBOL
V
SS
DD
= 25 C
V
OUT
V
V
DDQ
V
V
, V
I
I
OL
OH
OL
IL
IH
IL
° , f = 1MHz)
DDQ
, all other pins are not under test = 0V.
≤
V
DDQ
≤
≤
.
0.8xV
3ns acceptable.
V
3ns acceptable.
SYMBOL
V
V
DDQ
MIN
DD
-0.3
IN
1.7
-2
-2
SYMBOL
T
-
, V
P
I
, V
-0.2
STG
OS
DDQ
C
D
C
C
OUT
DDQ
OUT
IN1
IN2
SS
= 0V, T
TYP
1.8
1.8
0
-
-
-
-
A
= 0 to 70 C
MIN
1.5
1.5
2.0
-55 ~ +150
-1.0 ~ 2.6
-1.0 ~ 2.6
V
VALUE
DDQ
° )
MAX
1.9
0.3
0.2
50
1
2
2
-
+0.3
Publication Date: Aug. 2009
Revision: 1.3
MAX
3.0
3.5
4.5
M52D128168A
UNIT
μ
μ
V
V
V
V
V
A
A
UNIT
mA
I
°
W
I
V
V
OH
C
OL
NOTE
UNIT
= -0.1mA
= 0.1mA
pF
pF
pF
1
2
3
4
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