m52d128168a Elite Semiconductor Memory Technology Inc., m52d128168a Datasheet - Page 6

• Manufacturer Part Number: m52d128168a
• Description: 2m X 16 Bit X 4 Banks Mobile Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

AC CHARACTERISTICS
Note: 1. Parameters depend on programmed CAS latency.
Elite Semiconductor Memory Technology Inc.
CLK cycle time
CLK to valid
output delay
CLK to output in
Hi-Z
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to
the parameter.
Parameter
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
t
t
SAC
SHZ
SLZ
CC
OH
CH
SH
CL
SS
Min
2.5
2.5
2.5
7
9
2
1
1
-7
1000
Max
6.5
6.5
8
8
*All AC parameters are measured from half to half.
Min
7.5
2.5
2.5
2.5
9
2
1
1
-7.5
1000
Max
7
8
7
8
Publication Date: Aug. 2009
Revision: 1.3
Min
M52D128168A
2.5
1.5
10
12
3
3
2
1
-10
1000
Max
10
10
9
9
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
6/48
Note
1
1
2
3
3
3
3
2