m52d128168a Elite Semiconductor Memory Technology Inc., m52d128168a Datasheet - Page 35

• Manufacturer Part Number: m52d128168a
• Description: 2m X 16 Bit X 4 Banks Mobile Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

Page Write Cycle at Different Bank @ Burst Length = 4
*Note:
Elite Semiconductor Memory Technology Inc.
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.
Publication Date: Aug. 2009
Revision: 1.3
M52D128168A
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