m52d128168a Elite Semiconductor Memory Technology Inc., m52d128168a Datasheet - Page 4

• Manufacturer Part Number: m52d128168a
• Description: 2m X 16 Bit X 4 Banks Mobile Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，T
Note: 1.Measured with outputs open. Addresses are changed only one time during t
Elite Semiconductor Memory Technology Inc.
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Active Standby Current
in power-down mode
Active Standby Current
Operating Current
(Burst Mode)
Self Refresh Current
Deep Power Down
Current
in non power-down
mode
(One Bank Active)
Refresh Current
2.Refresh period is 64ms. Addresses are changed only one time during t
Parameter
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
CC1
CC2P
CC2PS
CC2N
CC2NS
CC3P
CC3PS
CC3N
CC3NS
CC4
CC5
CC7
CC6
Burst Length = 1
t
CKE
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
CKE
Input signals are changed one time during 2clks
All other pins
CKE
Input signals are stable
I
All Band Activated, t
t
CKE
CKE
RC
OL
RFC
= 0mA, Page Burst
≥
≥
≤
≤
≥
≥
≤
≥
≥
≤
≤
t
t
≤
RFC
RC
V
V
V
V
V
V
V
0.2V
0.2V
IL
IL
IH
IH
IL
IH
IH
V
(min), t
(max), t
(max), CLK
(max), t
(min)
(min), CS
(min), CLK
(min), CS
(min), CLK
IL
(max), CLK
≥
Test Condition
CC
CC
CC
V
DD
≥
CCD
=15ns
=15ns
≤
≥
≥
-0.2V or ≤ 0.2V
≤
≤
t
CC
V
V
V
V
≤
= t
A
V
IL
IH
IL
IL
= 0 to 70 C
(min), I
(max), t
IH
(max), t
(min), t
(max), t
CCD
V
(min), t
IL
TCSR range
(max), t
(min)
4 Banks
2 Bank
1 Bank
OL
CC
CC
CC
CC
CC
= 0mA
°
=10ns
=
=
=15ns
=
CC
∞
∞
∞
=
CC
(min).
∞
CC
(min).
130
380
360
340
70
80
15
-7
Publication Date: Aug. 2009
Revision: 1.3
M52D128168A
Version
-7.5
120
400
380
350
0.5
0.5
65
10
10
25
15
75
45
10
5
2
100
450
450
350
-10
65
70
70
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
uA
°C
4/48
1
2
1