MC68HC908GR4 MOTOROLA [Motorola, Inc], MC68HC908GR4 Datasheet - Page 159

• Manufacturer Part Number: MC68HC908GR4
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

11.4 FLASH Control Register
MC68HC908GR8 — Rev 4.0
MOTOROLA
Address:
The FLASH control register (FLCR) controls FLASH program and erase
operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
Reset:
Read:
Write:
Freescale Semiconductor, Inc.
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
Setting this read/write bit configures the 8K byte FLASH array for
mass erase operation.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
For More Information On This Product,
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = MASS erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
$FE08
Bit 7
0
0
Figure 11-1. FLASH Control Register (FLCR)
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Flash Memory
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
FLASH Control Register
ERASE
1
0
Technical Data
Flash Memory
PGM
Bit 0
0
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