MC68HC908GR4 MOTOROLA [Motorola, Inc], MC68HC908GR4 Datasheet - Page 160
MC68HC908GR4
Manufacturer Part Number
MC68HC908GR4
Description
Microcontrollers
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC908GR4.pdf
(408 pages)
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Flash Memory
11.5 FLASH Page Erase Operation
Technical Data
160
NOTE:
PGM — Program Control Bit
Use this step-by-step procedure to erase a page (64 bytes) of FLASH
memory to read as logic 1:
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
10. After a time, t
1. Set the ERASE bit, and clear the MASS bit in the FLASH control
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Freescale Semiconductor, Inc.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
For More Information On This Product,
1 = Program operation selected
0 = Program operation unselected
register.
range desired.
read mode.
Go to: www.freescale.com
Flash Memory
rcv
(typ. 1 s), the memory can be accessed again in
nvs
Erase
nvh
(min. 10 s)
(min. 5 s)
(min. 1ms)
MC68HC908GR8 — Rev 4.0
MOTOROLA
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