MT48LC4M32B2P-6:G Micron Technology Inc, MT48LC4M32B2P-6:G Datasheet - Page 25

IC SDRAM 128MBIT 167MHZ 86TSOP

MT48LC4M32B2P-6:G

Manufacturer Part Number
MT48LC4M32B2P-6:G
Description
IC SDRAM 128MBIT 167MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M32B2P-6:G

Package / Case
86-TSOPII
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
RoHS Compliant
Memory Case Style
TSOP
No. Of Pins
86
Operating Temperature Range
0°C To +70°C
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
17/7.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
195mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Memory Configuration
4 BLK (1M X 32)
Interface Type
LVTTL
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 12:
Figure 13:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
READ-to-WRITE
READ-to-WRITE with Extra Clock Cycle
Notes:
Notes:
COMMAND
1. CL = 3is used for illustration. The READ command may be to any bank, and the WRITE com-
The DQM input is used to avoid I/O contention, as shown in Figures 12 and 13. The
DQM signal must be asserted (HIGH) at least two clocks prior to the WRITE command
(DQM latency is two clocks for output buffers) to suppress data-out from the READ.
Once the WRITE command is registered, the DQs will go High-Z (or remain High-Z),
regardless of the state of the DQM signal; provided the DQM was active on the clock just
prior to the WRITE command that truncated the READ command. If not, the second
WRITE will be an invalid WRITE. For example, if DQM was low during T4 in Figure 13,
then the WRITEs at T5 and T7 would be valid, while the WRITE at T6 would be invalid.
The DQM signal must be de-asserted prior to the WRITE command (DQM latency is
zero clocks for input buffers) to ensure that the written data is not masked. Figure 12
shows the case where the clock frequency allows for bus contention to be avoided
without adding a NOP cycle, and Figure 13 shows the case where the additional NOP is
needed.
COMMAND
1. CL = 3 is used for illustration. The READ command may be to any bank, and the WRITE com-
ADDRESS
ADDRESS
mand may be to any bank. If a burst of one is used, then DQM is not required.
mand may be to any bank.
DQM
DQM
CLK
CLK
DQ
DQ
BANK,
COL n
BANK,
T0
COL n
T0
READ
READ
T1
T1
NOP
NOP
T2
T2
NOP
NOP
25
T3
T3
NOP
NOP
D
OUT
t HZ
t HZ
D
t CK
OUT
n
DON’T CARE
n
BANK,
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4
COL b
WRITE
T4
NOP
D
IN
b
t
DS
DON’T CARE
T5
BANK,
COL b
WRITE
D
IN
b
t
DS
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
Register Definition

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