MT48LC4M32B2P-6:G Micron Technology Inc, MT48LC4M32B2P-6:G Datasheet - Page 45

IC SDRAM 128MBIT 167MHZ 86TSOP

MT48LC4M32B2P-6:G

Manufacturer Part Number
MT48LC4M32B2P-6:G
Description
IC SDRAM 128MBIT 167MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M32B2P-6:G

Package / Case
86-TSOPII
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
RoHS Compliant
Memory Case Style
TSOP
No. Of Pins
86
Operating Temperature Range
0°C To +70°C
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
17/7.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
195mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Memory Configuration
4 BLK (1M X 32)
Interface Type
LVTTL
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Table 15:
Table 16:
Table 17:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
Parameter/Condition
Parameter/Condition
Parameter
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
Output leakage current:
DQs are disabled; 0V ≤ V
Output levels:
)Output high voltage (I
Output low voltage (I
Operating current: Active mode;
Burst = 2; READ or WRITE;
Standby current: Power-Down mode;
CKE = LOW; All banks idle
Standby current: Active mode; CS# = HIGH;
CKE = HIGH; All banks active after
No accesses in progress
Operating current: Burst mode; Continuous burst;
READ or WRITE; All banks active, CL = 3
Auto refresh current:
CL = 3; CKE, CS# = HIGH
Self refresh current: CKE ≤ 0.2V
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
DC Electrical Characteristics and Operating Conditions
Notes 1, 6 apply to the entire table; notes appear on page 48; V
I
Notes 1, 6, 11, 13 apply to the entire table; notes appear on page 48; V
Capacitance
Note 2 applies to the entire table; notes appear on page 48
DD
IN
Specifications and Conditions
≤ V
OUT
DD
OUT
OUT
(All other pins not under test = 0V)
= 4mA)
t
RC =
= –4mA)
≤ V
DD
t
RC (MIN); CL = 3
Q
t
RCD met;
t
RFC =
t
RFC (MIN)
45
V
Symbol
Symbol
DD
I
I
I
I
I
I
V
V
V
DD
DD
DD
DD
DD
DD
, V
I
Vil
Symbol
OZ
OH
I
OL
IH
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
DD
C
C
C
I
I
I
1
2
o
Q
DD
Min
= +3.3V ±0.3V, V
–0.3
190
195
320
2.4
–5
–5
65
-6
3
2
2
2
DD
Min
2.5
2.5
4.0
Max
, V
Electrical Specifications
V
DD
DD
Max
Q = +3.3V ±0.3V
165
175
320
3.6
0.8
0.4
55
-7
5
5
2
2
+ 0.3
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
DD
Max
Q = +3.3V ±0.3V
4.0
4.0
6.5
Units
Units
mA
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
V
3, 18, 19,
3, 18, 19,
3, 12, 18,
Units
Notes
Notes
19, 26
19, 26
pF
pF
pF
22
22
26
26
4

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