MC68HC908RF2MFA Freescale Semiconductor, MC68HC908RF2MFA Datasheet - Page 184

• Manufacturer Part Number: MC68HC908RF2MFA
• Description: IC MCU 2K FLASH 4MHZ 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908RF2MFA

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 4MHz
• Peripherals: LVD, POR, PWM, RF Mod
• Number Of I /o: 12
• Program Memory Size: 2KB (2K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 32-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Connectivity: -

Electrical Specifications
14.12 Memory Characteristics
Data Sheet
184
RAM data retention voltage
FLASH pages per row
FLASH bytes per page
FLASH read bus clock frequency
FLASH charge pump clock frequency
FLASH block/bulk erase time
FLASH row erase time
FLASH high voltage kill time
FLASH return to read time
FLASH page program pulses
FLASH page program step size
FLASH cumulative program time per row
FLASH HVEN low to MARGIN high time
FLASH MARGIN high to PGM low time
FLASH 2TS row program endurance
FLASH data retention time
1. f
2. f
3. fls
4. t
5. t
6. The minimum row endurance value specifies each row of the FLASH 2TS memory is guaranteed to work for at least this
7. The FLASH is guaranteed to retain data over the entire temperature range for at least the minimum time specified.
(See
Control)
between erase cycles
programming.
many erase/program cycles.
Read
Pump
Step
Row
Pulses
2.5.2 FLASH 2TS Charge Pump Frequency
is defined as the amount of time during one page program cycle that HVEN is held high.
is defined as the cumulative time a row can see the program voltage before the row must be erased before further
is defined as the frequency range for which the FLASH memory can be read.
is defined as the charge pump clock frequency required for program, erase, and margin read operations.
is defined as the number of pulses used to program the FLASH using the required smart program algorithm.
Characteristic
(7)
Freescale Semiconductor, Inc.
(6)
For More Information On This Product,
Go to: www.freescale.com
Electrical Specifications
fls
t
Symbol
RowErase
f
f
t
t
Pump
Read
V
t
t
Pulses
Step
Row
t
HVTV
Erase
t
t
HVD
VTP
RDR
—
—
—
—
Kill
(5)
(4)
(1)
(2)
(3)
32 K
Min
100
200
150
10
1.3
1.8
1.0
30
50
50
15
—
—
8
1
4
Typ
100
-—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MC68HC908RF2 — Rev. 4.0
2.5 M
Max
2.5
1.2
-—
-—
15
—
—
—
—
—
—
—
8
1
8
MOTOROLA
program
Pulses
Cycles
Pages
cycles
Bytes
Years
Page
MHz
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
V