M58BW016DB80T3F

Manufacturer Part NumberM58BW016DB80T3F
ManufacturerMicron Technology Inc
M58BW016DB80T3F datasheet
 


Specifications of M58BW016DB80T3F

Lead Free Status / Rohs StatusNot Compliant  
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Page 40/70

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DC and AC parameters
Table 15.
DC characteristics
Symbol
Parameter
I
Input Leakage current
LI
I
Output Leakage current
LO
I
Supply current (Random Read)
DD
(1)
I
Supply current (Power-up)
DDP-UP
I
Supply current (Burst Read)
DDB
Supply current (Standby)
I
DD1
Supply current (Auto Low-Power)
I
Supply current (Reset/Power-down)
DD2
Supply current (Program or Erase,
I
DD3
Set Lock bit, Erase Lock bit)
Supply current
I
DD4
(Erase/Program Suspend)
I
Program current (Read or Standby)
PP
I
Program current (Read or Standby)
PP1
I
Program current (Power-down)
PP2
Program current (Program)
I
PP3
Program in progress
Program current (Erase) Erase in
I
PP4
progress
V
Input Low voltage
IL
V
Input High voltage (for DQ lines)
IH
Input High voltage (for input only
V
IH
lines)
V
Output Low voltage
OL
V
Output High voltage CMOS
OH
Program voltage
V
PP1
(program or erase operations)
Program voltage
V
PPH
(program or erase operations)
V
supply voltage (erase and
DD
V
LKO
program lockout)
V
supply voltage (erase and
PP
V
PPLK
program lockout)
1. I
is defined only during the power-up phase of the M58BW016FT/B, from the moment current is applied with RP Low
DDP-UP
to the moment when the supply voltage has become stable and RP is brought to High.
40/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Test condition
0 V V
V
IN
DDQ
0 V V
V
OUT
DDQ
M58BW016DT/B
E = V
, G = V
,
IL
IH
f
= 6 MHz
M58BW016FT/B
add
applies only to
E = V
IH
M58BW016FT/B
M58BW016DT/B
E = V
, G = V
,
IL
IH
f
= 40 MHz
M58BW016FT/B
clock
M58BW016DT/B
E = V
, G = V
,
IL
IH
f
= 56 MHz
M58BW016FT/B
clock
M58BW016DT/B
E = RP = V
±
DD
0.2 V
M58BW016FT/B
E = V
± 0.2 V,
SS
RP = V
± 0.2 V
DD
RP = V
± 0.2 V
SS
Program, Block Erase in progress
M58BW016DT/B
E = V
IH
M58BW016FT/B
V
V
PP
PP1
V
V
PP
PP1
RP = V
IL
V
= V
PP
PP1
V
= V
PP
PPH
V
= V
PP
PP1
V
= V
PP
PPH
I
= 100 µA
OL
I
= –100 µA
OH
Min
Max
Unit
±1
µA
±5
µA
20
mA
25
20
mA
30
mA
30
mA
40
mA
60
µA
150
µA
60
µA
60
µA
30
mA
40
µA
150
µA
± 30
µA
± 30
µA
± 5
µA
200
µA
20
mA
200
µA
20
mA
–0.5
0.2V
V
DDQIN
0.8V
V
+0.3
V
DDQIN
DDQ
0.8V
3.6
V
DDQIN
0.1
V
V
–0.1
V
DDQ
2.7
3.6
V
11.4
12.6
V
2.2
V
11.4
V