M58BW016DB80T3F

Manufacturer Part NumberM58BW016DB80T3F
ManufacturerMicron Technology Inc
M58BW016DB80T3F datasheet
 

Specifications of M58BW016DB80T3F

Lead Free Status / Rohs StatusNot Compliant  
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 28.
CFI - device voltage and timing specification
Address A0-A18
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h-24h
25h
26h
1. Bits are coded in binary code decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in hexadecimal and scaled in Volts while bit3 to bit0 are in binary code decimal and
scaled in 100 mV.
Table 29.
Device geometry definition
Address A0-A18
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
Data
(1)
27h
V
min, 2.7 V
DD
(1)
36h
V
max, 3.6 V
DD
(2)
B4h
V
min
PP
(2)
C6h
V
max
PP
n
04h
2
ms typical time-out for Word, DWord prog – not available
n
00h
2
ms, typical time-out for max buffer write – not available
n
0Ah
2
ms, typical time-out for Erase Block
n
00h
2
ms, typical time-out for chip erase – not available
Reserved
n
04h
2
x typical for individual block erase time-out maximum
n
00h
2
x typical for chip erase max time-out – not available
Data
n
15h
2
number of bytes memory size
03h
Device interface sync./async.
00h
Organization sync./async.
00h
n
Page size in bytes, 2
00h
02h
Bit7-0 = number of erase block regions in device
1Eh
Number (n-1) of blocks of identical size; n=31
00h
00h
Erase block region information x 256 bytes per erase block
(64 Kbytes)
01h
07h
Number (n-1) of blocks of identical size; n=8
00h
20h
Erase block region information x 256 bytes per erase block
(8 Kbytes)
00h
Common Flash interface (CFI)
Description
Description
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