MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet
MT29F8G08FABWP
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MT29F8G08FABWP Summary of contents
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... NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features • Organization: • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • Read performance: • ...
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... Common 1 1 Common 2 2 Common to verify that the part number is offered and valid. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 Part Numbering Information WP ES Production Status Blank = Production ES = Engineering Sample MS = Mechanical Sample Operating Temperature Range Blank = Commercial (0°C to +70° Extended (– ...
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... Power Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41 CC Timing Diagrams .45 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29bTOC.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 Table of Contents ©2004 Micron Technology, Inc. All rights reserved. ...
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... PROGRAM PAGE CACHE MODE Ending on 15h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29bLOF.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory only .22 CC Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 List of Figures ©2004 Micron Technology, Inc. All rights reserved. ...
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... Figure 53: RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 Figure 54: Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29bLOF.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 List of Figures ©2004 Micron Technology, Inc. All rights reserved. ...
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... AC Characteristics—Normal Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 Table 19: PROGRAM/ERASE Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29bLOT.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 List of Tables ©2004 Micron Technology, Inc. All rights reserved. ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory NAND Flash devices include standard Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 General Description ©2004 Micron Technology, Inc. All rights reserved. ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Address Register I/O Control Status Register Command Register Control Logic Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 General Description Column Decode Data Register Cache Register ...
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... not use: Must be left floating. No connect: NC pins are not internally connected. These pins can be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 General Description ©2004 Micron Technology, Inc. All rights reserved. ...
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... See Figures 5 and 6 on page 11 for additional memory mapping and addressing details. 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 Architecture ©2004 Micron Technology, Inc. All rights reserved. ...
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... A27 (4Gb: A28 Block Address Page Address within a block Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 Addressing Spare Address within a page A1 1 page 63 Page Address within a block Column Address within a page ...
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... CA4 CA3 LOW LOW CA11 RA17 RA16 RA15 RA25 RA24 RA23 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 Addressing I/O 0 I/O 7 (128K + 4K) bytes = ( bytes) = (2K + 64) bytes x 64 pages = (128K + 4K) bytes x 2,048 blocks = 2,112 Mb I/O2 I/O1 I/O0 CA2 ...
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... CA5 CA4 LOW LOW LOW RA17 RA16 RA15 RA25 RA24 RA23 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 Addressing I/O 0 I/O 15 (64K + 2K) words = (1K + 32) words = (1K + 32) words x 64 pages = (64K + 2K) words x 2,048 blocks = 2,112 Mb I/O3 I/O2 I/O1 CA3 ...
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... CA4 CA3 LOW LOW CA11 RA17 RA16 RA15 RA25 RA24 RA23 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 Addressing I/O 0 I/O 7 (128K + 4K) bytes = ( bytes) = (2K + 64) bytes x 64 pages = (128K + 4K) bytes x 4,096 blocks = 4,224 Mb I/O2 I/O1 I/O0 CA2 ...
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... LOW LOW LOW RA17 RA16 RA15 RA25 RA24 RA23 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 Addressing I pages = 1 block (64K + 2K) words 1 page = (1K + 32) words 1 block = (1K + 32) words x 64 pages = (64K + 2K) words 1 device = (1K + 32) words x 64 pages ...
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... ERASE Operation” section on page 35 for details. 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Bus Operation ©2004 Micron Technology, Inc. All rights reserved. ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Typically R is 25µs. When data is available in the data Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 Bus Operation ©2004 Micron Technology, Inc. All rights reserved. ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory where and C = total capacitive load . CC Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 Bus Operation ©2004 Micron Technology, Inc. All rights reserved. ...
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... R/B# pin. Rp R/B# Open drain output I OL Device calculated at 10%–90% points. 19 Bus Operation 3.2V = 8mA + Σ Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...
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... 2kΩ 4kΩ 6kΩ 8kΩ 10kΩ 100pF 20 Bus Operation 12000 @3.60V (max) 12kΩ @3.60V (max) OL Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...
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... 0V/V 0V ground. Do not transition PRE during device operations Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 Bus Operation 2 Mode Read mode Command input Address input Write mode Command input Address input Data input Sequential read and data output ...
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... RPRE value. Once the READ is complete and R/B# goes only ≈ 2.5V t RPRE 3V device: ≈ 2.5V HIGH 10µs Micron Technology, Inc., reserves the right to change products or specifications without notice. 22 Bus Operation , 3V V devices automatically transfer the CC 1st 2nd 3rd 3V device: ≈ 2.5V Don't Care Undefined © ...
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... Multiplexed NAND Flash Memory Cycle 1 00h 31h 1 3Fh 00h 05h 90h 70h 80h 80h 2 85h 4 85h 60h FFh Micron Technology, Inc., reserves the right to change products or specifications without notice. 23 Command Definitions Cycle 2 Valid During Busy 30h No — No — No 35h No E0h No — No — ...
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... Address (5 Cycles) 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory t R 30h Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 Command Definitions t R (transfer from Flash array rate. (See Figure 17 Data Output (Serial Access) Don‘ ...
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... R during the time it takes t DCBSYR1 while data is being transferred from t R, then the PAGE READ is hidden. t DCBSYR2. This time can vary, Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Data Output ...
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Figure 19: PAGE READ CACHE MODE CLE CE# WE# ALE t R R/B# RE# I/Ox 30h 00h Address (5 Cycles) t DCBSYR1 t DCBSYR2 31h Data Output (Serial Access) 31h Data Output (Serial Access) t DCBSYR2 3fh Data Output (Serial ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory WHR t REA 90h 00h Address, 1 Cycle Manufacturer Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 Command Definitions Byte 0 Byte 1 Byte 2 Byte 3 Device Don't Care 1 ...
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... Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 Command Definitions 1 I/O2 I/O1 I/O0 Value Notes 2Ch DAh CAh DCh CCh ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory t CLEA t CLR t REA Status Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 Command Definitions Status Status Toggle RE# as required t R (transfer from Flash array to ...
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... Ready/busy Ready/busy Ready/busy 2 cache Write protect Write protect Write protect “0” = Protected — — Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 Command Definitions Block Erase Definition Pass/fail “0” = Successful PROGRAM/ERASE “1” = Error in PROGRAM/ERASE — ...
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... Address (2 Cycles) 85h IN 31 Command Definitions t PROG. The READ STATUS t PROG 70h Status I PROGRAM successful I PROGRAM error t PROG D 10h 70h IN Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Status ...
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... CBSY Address & Address & 80h 15h 80h Data Input Data Input t PROG 2 Address & Status 10h 70h Data Input Output Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. t LPROG 1 10h ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 33 Command Definitions ©2004 Micron Technology, Inc. All rights reserved. ...
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... Cycles) (5 Cycles) 34 Command Definitions t PROG Address 10h 70h (5 Cycles) t PROG Address Data 85h Data 10h (2 Cycles) Unlimited number of repetitions. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Status 70h Status ...
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... Multiplexed NAND Flash Memory t BERS erase time. t BERS D0h 35 Command Definitions 70h Status I ERASE successful I ERASE error Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Don‘t Care ...
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... RST FF RESET Command Bit 7 Bit 6 Bit 5 Bit Micron Technology, Inc., reserves the right to change products or specifications without notice. 36 Command Definitions Bit 3 Bit 2 Bit 1 Bit ©2004 Micron Technology, Inc. All rights reserved. Hex E0h ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory t WW 60h D0h t WW 60h D0h t WW 80h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 37 Command Definitions ©2004 Micron Technology, Inc. All rights reserved. ...
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... PROGRAM Disable WE# I/Ox WP# R/B# 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory t WW 80h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 38 Command Definitions ©2004 Micron Technology, Inc. All rights reserved. ...
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... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory during the endurance life of the product. VB Micron Technology, Inc., reserves the right to change products or specifications without notice. 39 Error Management ) valid blocks out VB ©2004 Micron Technology, Inc. All rights reserved. ...
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... Multiplexed NAND Flash Memory Symbol V Supply voltage on any pin relative to Vss STG Symbol t A Commercial t A Extended Vcc Vss Micron Technology, Inc., reserves the right to change products or specifications without notice. 40 Electrical Characteristics Min Max –0.6 +4.6 –6 5 +150 5 Min Typ Max 0 — +70 –40 — ...
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... -400µ 2.1mA 0.4V I (R/B Micron Technology, Inc., reserves the right to change products or specifications without notice. 41 Electrical Characteristics goes below 1.1V, PROGRAM and ERASE CC reaches 1.1V, a minimum of 10µs should be CC Min Typ Max — 15 — 15 — 15 — — ...
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... IN Value 0.0V to 3.3V 5ns TTL GATE and CL = 50pF 1 TTL GATE and CL = 100pF Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Notes 1, 2 Notes Notes 1 ...
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... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Unit Notes ...
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... WB, even if R/B# is ready. Typ Max — 700 — — 300 700 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Unit Notes µs µs ns ...
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... ALS COMMAND t CLS ALS t ALH Address Don‘t Care Micron Technology, Inc., reserves the right to change products or specifications without notice. 45 Timing Diagrams Don‘t Care Undefined ©2004 Micron Technology, Inc. All rights reserved. ...
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... OUT Timing Diagrams t CLH Final Don‘t Care t CHZ t REA RHZ OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Don‘t Care ...
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... REA Status Output t CLR OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Don‘t Care t RHZ D OUT M Don‘t Care ...
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... Don‘t Care t t CLR t WHR D Col Col OUT 05h E0h Add 1 Add Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. CLEA t REA D D OUT OUT Don’t Care ...
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Figure 41: PAGE READ CACHE MODE Timing Diagram, Part CLE t t CLS CLH CE WE# ALE RE Col Col Row Row I/Ox 00h Add 1 Add ...
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Figure 42: PAGE READ CACHE MODE Timing Diagram, Part CLE t t CLS CLH CE# WE# t CEA ALE REA D ...
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Figure 43: PAGE READ CACHE MODE Timing without R/B#, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row Row Row I/Ox 00h Add ...
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Figure 44: PAGE READ CACHE MODE Timing without R/B#, Part CLE t t CLS CLH CE# WE# t CEA ALE REA D D OUT I/Ox ...
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... Byte 1 1 Manufacturer ID Device ID Data Input CE WE# 53 Timing Diagrams 1 Byte 2 Byte 3 1 Don't Care Data Input Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. 10h Don‘t Care ...
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... PROG Col 10h Add 2 N N+1 PROGRAM Serial Input Command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Status Don‘t Care 70h Status READ STATUS Command Don‘t Care ...
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... IN IN 10h Add 2 Add 1 Add 2 Add PROGRAM Last Page Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Status 70h READ STATUS Command Don‘t Care 70h Status Don‘t Care ...
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Figure 51: PROGRAM PAGE CACHE MODE Ending on 15h CLE CE WE# ALE RE# Col Col Row Row Row D IN I/Ox 80h Add 1 Add 2 Add 1 Add 2 Add 3 N SERIAL DATA Serial Input ...
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... Multiplexed NAND Flash Memory BERS Row D0h Add 3 ERASE Command Busy RST 57 Timing Diagrams Status 70h READ STATUS Command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Don‘t Care ...
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... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range for production devices ...
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... Updated package drawing. Rev 4/05 • Initial Release 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 59 Revision History ©2004 Micron Technology, Inc. All rights reserved. ...