MT29F8G08FABWP

Manufacturer Part NumberMT29F8G08FABWP
ManufacturerMicron Technology, Inc
MT29F8G08FABWP datasheet
 
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NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
Features
• Organization:
• Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
x16: 1,056 words (1,024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
• Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• Read performance:
• Random read: 25µs
• Sequential read: 30ns (3V x8 only)
• Write performance:
• Page program: 300µs (TYP)
• Block erase: 2ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• Data retention: 10 years
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
• V
: 2.7V–3.6V
CC
• Automated PROGRAM and ERASE
• Basic NAND command set:
• PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM DATA
INPUT, PROGRAM PAGE CACHE MODE, INTER-
NAL DATA MOVE, INTERNAL DATA MOVE with
RANDOM DATA INPUT, BLOCK ERASE, RESET
• New commands:
• PAGE READ CACHE MODE
• READ UNIQUE ID (contact factory)
• READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
• PROGRAM/ERASE operation completion
• PROGRAM/ERASE pass/fail condition
• Write-protect status
• Ready/busy# (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• PRE pin: prefetch on power up
• WP# pin: hardware write protect
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__1.fm - Rev. H 9/05 EN
Products and specifications discussed herein are subject to change by Micron without notice.
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Figure 1:
48-PIN TSOP Type 1
Options
• Density:
2Gb (single die)
4Gb (dual-die stack)
8Gb (quad-die stack)
• Device width:
x8
x16
• Configuration: # of die # of CE# # of R/B#
• V
: 2.7V–3.6V
CC
• Second generation die
• Package:
48 TSOP type I (lead-free plating)
48 TSOP type I (contact factory)
• Operating temperature:
Commercial (0–70°C)
Extended temperature
(-40°C to +85°C)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
Features
Marking
MT29F2GxxAAB
MT29F4GxxBAB
MT29F8GxxFAB
MT29Fxx08x
MT29Fxx16x
1
1
1
A
2
1
1
B
4
2
2
F
A
B
WP
WG
ET
©2004 Micron Technology, Inc. All rights reserved.

MT29F8G08FABWP Summary of contents

  • Page 1

    ... NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features • Organization: • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • Read performance: • ...

  • Page 2

    ... Common 1 1 Common 2 2 Common to verify that the part number is offered and valid. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 Part Numbering Information WP ES Production Status Blank = Production ES = Engineering Sample MS = Mechanical Sample Operating Temperature Range Blank = Commercial (0°C to +70° Extended (– ...

  • Page 3

    ... Power Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41 CC Timing Diagrams .45 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29bTOC.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 Table of Contents ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 4

    ... PROGRAM PAGE CACHE MODE Ending on 15h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29bLOF.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory only .22 CC Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 List of Figures ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 5

    ... Figure 53: RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 Figure 54: Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29bLOF.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 List of Figures ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 6

    ... AC Characteristics—Normal Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 Table 19: PROGRAM/ERASE Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29bLOT.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 List of Tables ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 7

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory  NAND Flash devices include standard Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 General Description ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 8

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Address Register I/O Control Status Register Command Register Control Logic Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 General Description Column Decode Data Register Cache Register ...

  • Page 9

    ... not use: Must be left floating. No connect: NC pins are not internally connected. These pins can be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 General Description ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 10

    ... See Figures 5 and 6 on page 11 for additional memory mapping and addressing details. 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 Architecture ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 11

    ... A27 (4Gb: A28 Block Address Page Address within a block Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 Addressing Spare Address within a page A1 1 page 63 Page Address within a block Column Address within a page ...

  • Page 12

    ... CA4 CA3 LOW LOW CA11 RA17 RA16 RA15 RA25 RA24 RA23 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 Addressing I/O 0 I/O 7 (128K + 4K) bytes = ( bytes) = (2K + 64) bytes x 64 pages = (128K + 4K) bytes x 2,048 blocks = 2,112 Mb I/O2 I/O1 I/O0 CA2 ...

  • Page 13

    ... CA5 CA4 LOW LOW LOW RA17 RA16 RA15 RA25 RA24 RA23 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 Addressing I/O 0 I/O 15 (64K + 2K) words = (1K + 32) words = (1K + 32) words x 64 pages = (64K + 2K) words x 2,048 blocks = 2,112 Mb I/O3 I/O2 I/O1 CA3 ...

  • Page 14

    ... CA4 CA3 LOW LOW CA11 RA17 RA16 RA15 RA25 RA24 RA23 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 Addressing I/O 0 I/O 7 (128K + 4K) bytes = ( bytes) = (2K + 64) bytes x 64 pages = (128K + 4K) bytes x 4,096 blocks = 4,224 Mb I/O2 I/O1 I/O0 CA2 ...

  • Page 15

    ... LOW LOW LOW RA17 RA16 RA15 RA25 RA24 RA23 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 Addressing I pages = 1 block (64K + 2K) words 1 page = (1K + 32) words 1 block = (1K + 32) words x 64 pages = (64K + 2K) words 1 device = (1K + 32) words x 64 pages ...

  • Page 16

    ... ERASE Operation” section on page 35 for details. 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Bus Operation ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 17

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Typically R is 25µs. When data is available in the data Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 Bus Operation ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 18

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory where and C = total capacitive load . CC Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 Bus Operation ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 19

    ... R/B# pin. Rp R/B# Open drain output I OL Device calculated at 10%–90% points. 19 Bus Operation 3.2V = 8mA + Σ Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 20

    ... 2kΩ 4kΩ 6kΩ 8kΩ 10kΩ 100pF 20 Bus Operation 12000 @3.60V (max) 12kΩ @3.60V (max) OL Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 21

    ... 0V/V 0V ground. Do not transition PRE during device operations Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 Bus Operation 2 Mode Read mode Command input Address input Write mode Command input Address input Data input Sequential read and data output ...

  • Page 22

    ... RPRE value. Once the READ is complete and R/B# goes only ≈ 2.5V t RPRE 3V device: ≈ 2.5V HIGH 10µs Micron Technology, Inc., reserves the right to change products or specifications without notice. 22 Bus Operation , 3V V devices automatically transfer the CC 1st 2nd 3rd 3V device: ≈ 2.5V Don't Care Undefined © ...

  • Page 23

    ... Multiplexed NAND Flash Memory Cycle 1 00h 31h 1 3Fh 00h 05h 90h 70h 80h 80h 2 85h 4 85h 60h FFh Micron Technology, Inc., reserves the right to change products or specifications without notice. 23 Command Definitions Cycle 2 Valid During Busy 30h No — No — No 35h No E0h No — No — ...

  • Page 24

    ... Address (5 Cycles) 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory t R 30h Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 Command Definitions t R (transfer from Flash array rate. (See Figure 17 Data Output (Serial Access) Don‘ ...

  • Page 25

    ... R during the time it takes t DCBSYR1 while data is being transferred from t R, then the PAGE READ is hidden. t DCBSYR2. This time can vary, Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Data Output ...

  • Page 26

    Figure 19: PAGE READ CACHE MODE CLE CE# WE# ALE t R R/B# RE# I/Ox 30h 00h Address (5 Cycles) t DCBSYR1 t DCBSYR2 31h Data Output (Serial Access) 31h Data Output (Serial Access) t DCBSYR2 3fh Data Output (Serial ...

  • Page 27

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory WHR t REA 90h 00h Address, 1 Cycle Manufacturer Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 Command Definitions Byte 0 Byte 1 Byte 2 Byte 3 Device Don't Care 1 ...

  • Page 28

    ... Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 Command Definitions 1 I/O2 I/O1 I/O0 Value Notes 2Ch DAh CAh DCh CCh ...

  • Page 29

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory t CLEA t CLR t REA Status Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 Command Definitions Status Status Toggle RE# as required t R (transfer from Flash array to ...

  • Page 30

    ... Ready/busy Ready/busy Ready/busy 2 cache Write protect Write protect Write protect “0” = Protected — — Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 Command Definitions Block Erase Definition Pass/fail “0” = Successful PROGRAM/ERASE “1” = Error in PROGRAM/ERASE — ...

  • Page 31

    ... Address (2 Cycles) 85h IN 31 Command Definitions t PROG. The READ STATUS t PROG 70h Status I PROGRAM successful I PROGRAM error t PROG D 10h 70h IN Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Status ...

  • Page 32

    ... CBSY Address & Address & 80h 15h 80h Data Input Data Input t PROG 2 Address & Status 10h 70h Data Input Output Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. t LPROG 1 10h ...

  • Page 33

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 33 Command Definitions ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 34

    ... Cycles) (5 Cycles) 34 Command Definitions t PROG Address 10h 70h (5 Cycles) t PROG Address Data 85h Data 10h (2 Cycles) Unlimited number of repetitions. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Status 70h Status ...

  • Page 35

    ... Multiplexed NAND Flash Memory t BERS erase time. t BERS D0h 35 Command Definitions 70h Status I ERASE successful I ERASE error Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Don‘t Care ...

  • Page 36

    ... RST FF RESET Command Bit 7 Bit 6 Bit 5 Bit Micron Technology, Inc., reserves the right to change products or specifications without notice. 36 Command Definitions Bit 3 Bit 2 Bit 1 Bit ©2004 Micron Technology, Inc. All rights reserved. Hex E0h ...

  • Page 37

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory t WW 60h D0h t WW 60h D0h t WW 80h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 37 Command Definitions ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 38

    ... PROGRAM Disable WE# I/Ox WP# R/B# 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory t WW 80h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 38 Command Definitions ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 39

    ... Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory during the endurance life of the product. VB Micron Technology, Inc., reserves the right to change products or specifications without notice. 39 Error Management ) valid blocks out VB ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 40

    ... Multiplexed NAND Flash Memory Symbol V Supply voltage on any pin relative to Vss STG Symbol t A Commercial t A Extended Vcc Vss Micron Technology, Inc., reserves the right to change products or specifications without notice. 40 Electrical Characteristics Min Max –0.6 +4.6 –6 5 +150 5 Min Typ Max 0 — +70 –40 — ...

  • Page 41

    ... -400µ 2.1mA 0.4V I (R/B Micron Technology, Inc., reserves the right to change products or specifications without notice. 41 Electrical Characteristics goes below 1.1V, PROGRAM and ERASE CC reaches 1.1V, a minimum of 10µs should be CC Min Typ Max — 15 — 15 — 15 — — ...

  • Page 42

    ... IN Value 0.0V to 3.3V 5ns TTL GATE and CL = 50pF 1 TTL GATE and CL = 100pF Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Notes 1, 2 Notes Notes 1 ...

  • Page 43

    ... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Unit Notes ...

  • Page 44

    ... WB, even if R/B# is ready. Typ Max — 700 — — 300 700 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Unit Notes µs µs ns ...

  • Page 45

    ... ALS COMMAND t CLS ALS t ALH Address Don‘t Care Micron Technology, Inc., reserves the right to change products or specifications without notice. 45 Timing Diagrams Don‘t Care Undefined ©2004 Micron Technology, Inc. All rights reserved. ...

  • Page 46

    ... OUT Timing Diagrams t CLH Final Don‘t Care t CHZ t REA RHZ OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Don‘t Care ...

  • Page 47

    ... REA Status Output t CLR OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Don‘t Care t RHZ D OUT M Don‘t Care ...

  • Page 48

    ... Don‘t Care t t CLR t WHR D Col Col OUT 05h E0h Add 1 Add Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. CLEA t REA D D OUT OUT Don’t Care ...

  • Page 49

    Figure 41: PAGE READ CACHE MODE Timing Diagram, Part CLE t t CLS CLH CE WE# ALE RE Col Col Row Row I/Ox 00h Add 1 Add ...

  • Page 50

    Figure 42: PAGE READ CACHE MODE Timing Diagram, Part CLE t t CLS CLH CE# WE# t CEA ALE REA D ...

  • Page 51

    Figure 43: PAGE READ CACHE MODE Timing without R/B#, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row Row Row I/Ox 00h Add ...

  • Page 52

    Figure 44: PAGE READ CACHE MODE Timing without R/B#, Part CLE t t CLS CLH CE# WE# t CEA ALE REA D D OUT I/Ox ...

  • Page 53

    ... Byte 1 1 Manufacturer ID Device ID Data Input CE WE# 53 Timing Diagrams 1 Byte 2 Byte 3 1 Don't Care Data Input Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. 10h Don‘t Care ...

  • Page 54

    ... PROG Col 10h Add 2 N N+1 PROGRAM Serial Input Command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Status Don‘t Care 70h Status READ STATUS Command Don‘t Care ...

  • Page 55

    ... IN IN 10h Add 2 Add 1 Add 2 Add PROGRAM Last Page Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Status 70h READ STATUS Command Don‘t Care 70h Status Don‘t Care ...

  • Page 56

    Figure 51: PROGRAM PAGE CACHE MODE Ending on 15h CLE CE WE# ALE RE# Col Col Row Row Row D IN I/Ox 80h Add 1 Add 2 Add 1 Add 2 Add 3 N SERIAL DATA Serial Input ...

  • Page 57

    ... Multiplexed NAND Flash Memory BERS Row D0h Add 3 ERASE Command Busy RST 57 Timing Diagrams Status 70h READ STATUS Command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Don‘t Care ...

  • Page 58

    ... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range for production devices ...

  • Page 59

    ... Updated package drawing. Rev 4/05 • Initial Release 09005aef818a56a7 pdf/ 09005aef81590bdd source 2gb_nand_m29b__2.fm - Rev and 8Gb x8/x16 Multiplexed NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 59 Revision History ©2004 Micron Technology, Inc. All rights reserved. ...