MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet - Page 41

• Manufacturer Part Number: MT29F8G08FABWP
• Manufacturer: Micron Technology, Inc

V
Table 13:
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
Parameter
Sequential read current
Program current
Erase current
Standby current (TTL)
Standby current (CMOS)
MT29F2GxxAAB
Standby current (CMOS)
MT29F4GxxBAB
MT29F8G08FAB
Input leakage current
Output leakage current
Input high voltage
Input low voltage (all inputs)
Output high voltage
Output low voltage
Output low current (R/B#)
CC
Power Cycling
DC and Operating Characteristics
Note:
Micron NAND Flash devices are designed to prevent data corruption during power tran-
sitions. V
functions are disabled. WP# provides additional hardware protection. WP# should be
kept at V
allowed for the Flash to initialize before executing any commands. (See Figure 16 on
page 22.)
The PRE function is not supported on extended-temperature devices.
IL
CC
PRE = WP# = 0V/V
PRE = WP# = 0V/V
PRE = WP# = 0V/V
RE#, WP#, PRE, R/B#
CE#, CLE, ALE, WE#,
I/O [7–0], I/O [15–0]
during power cycling. When V
V
CE# = V
CE# = V
is internally monitored. When V
V
t
OUT
CYCLE = 30ns,
I
IN
Conditions
OH
I
I
OL
V
OUT
CE# = V
CE# = V
OL
= 0V to V
= 0V to V
= -400µA
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
= 2.1mA
= 0.4V
—
—
—
= 0mA
CC
CC
- 0.2V,
- 0.2V,
IH
IL
,
,
CC
CC
CC
CC
CC
41
I
Symbol
OL
Icc1
I
I
I
I
I
V
V
V
CC
CC
I
V
SB
SB
SB
(R/B#)
I
LO
OH
LI
OL
IH
IL
2
3
1
2
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC
reaches 1.1V, a minimum of 10µs should be
CC
0.8 x Vcc
goes below 1.1V, PROGRAM and ERASE
Min
-0.3
2.4
—
—
—
—
—
—
—
—
—
8
Electrical Characteristics
Typ
15
15
15
10
20
10
—
—
—
—
—
—
—
©2004 Micron Technology, Inc. All rights reserved.
V
CC
Max
100
±10
±10
0.8
0.4
30
30
30
50
—
—
1
+ 0.3
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V