MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet - Page 14

• Manufacturer Part Number: MT29F8G08FABWP
• Manufacturer: Micron Technology, Inc

Figure 9:
Table 4:
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
Cycle
First
Second
Third
Fourth
Fifth
Cache Register
Data Register
4,096 blocks
Array Addressing: MT29F4G08BxB and MT29F8G08FxB
CAx = column address; RAx = row address.
Array Organization for MT29F4G08BxB and MT29F8G08FxB (x8)
RA19
RA27
LOW
LOW
I/O7
CA7
Notes: 1. Die address boundary: 0 = 0 – 2Gb, 1 = 2Gb – 4Gb.
Note:
RA18
RA26
LOW
LOW
I/O6
CA6
For the 8Gb MT29F8G08F, the 4Gb array organization shown here applies to each chip
enable (CE# and CE2#).
2,048
2,048
1 Block
RA17
RA25
LOW
LOW
I/O5
CA5
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
2,112 bytes
RA16
RA24
LOW
LOW
I/O4
CA4
14
64
64
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CA11
RA15
RA23
LOW
I/O3
CA3
64 pages = 1 block
1 page
1 block
1 device = (2K + 64) bytes x 64 pages
I/O 7
I/O 0
CA10
RA14
RA22
LOW
= (2K + 64 bytes)
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= 4,224 Mb
I/O2
CA2
x 4,096 blocks
(128K + 4K) bytes
©2004 Micron Technology, Inc. All rights reserved.
RA29
RA13
RA21
I/O1
CA1
CA9
1
Addressing
RA12
RA20
RA28
I/O0
CA0
CA8