MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet - Page 42

• Manufacturer Part Number: MT29F8G08FABWP
• Manufacturer: Micron Technology, Inc

Table 14:
Table 15:
Table 16:
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
Parameter
Description
Parameter
Number of valid blocks
Input capacitance
Input/output capacitance (I/O)
Input pulse levels—MT29FxGxxxAB
Input rise and fall times
Input and output timing levels
Output load
Valid Blocks
Capacitance
Test Conditions
MT29FxGxxxAB (V
MT29FxGxxxAB (V
Notes: 1. Invalid blocks are blocks that contain one or more bad bits. The device may contain bad
Notes: 1. These parameters are verified in device characterization and are not 100% tested.
Notes: 1. Verified in device characterization; not 100% tested.
2. Block 00h (the first block) is guaranteed to be valid and does not require error correction
2. Test conditions: T
blocks upon shipment. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below N
device. Do not erase or program blocks marked invalid by the factory.
up to 1,000 PROGRAM/ERASE cycles.
Symbol
Symbol
N
C
C
CC
CC
VB
IN
IO
= 3.0V ±10%)
= 3.3V ±10%)
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
c
MT29F2GxxAAB
MT29F2GxxAAB
MT29F2GxxAAB
MT29F4GxxBAB
MT29F8G08FAB
MT29F4GxxBAB
MT29F8G08FAB
MT29F4GxxBAB
MT29F8G08FAB
= 25°C; f = 1 MHz; V
Device
Device
42
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
= 0V.
2,008
4,016
8,032
Min
1 TTL GATE and CL = 100pF
1 TTL GATE and CL = 50pF
Max
VB
10
20
40
10
20
40
during the endurance life of the
0.0V to 3.3V
2,048
4,096
8,192
Value
Max
V
Electrical Characteristics
5ns
CC
/2
©2004 Micron Technology, Inc. All rights reserved.
Blocks
Unit
Unit
pF
pF
Notes
Notes
Notes
1, 2
1, 2
1, 2
1