MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet - Page 21

• Manufacturer Part Number: MT29F8G08FABWP
• Manufacturer: Micron Technology, Inc

Table 6:
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
CLE
H
H
X
X
X
X
L
L
L
L
L
ALE
Mode Selection
H
H
X
X
X
X
L
L
L
L
L
Notes: 1. WP# should be biased to CMOS HIGH or LOW for standby.
CE#
X
X
X
H
L
L
L
L
L
L
L
2. PRE should be tied to V
3. Mode selection settings for this table: H = Logic level HIGH; L = Logic level LOW;
The PRE function is not supported on extended-temperature devices.
X = V
WE#
H
H
X
X
X
X
IH
or V
IL
RE#
.
H
H
H
H
H
H
X
X
X
X
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
0V/V
WP#
CC
X
X
H
H
H
X
X
H
H
L
CC
or ground. Do not transition PRE during device operations.
1
21
0V/V
PRE
X
X
X
X
X
X
X
X
X
X
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC
2
Mode
Read mode
Write mode
Data input
Sequential read and data output
During read (busy)
During program (busy)
During erase (busy)
Write protect
Standby
©2004 Micron Technology, Inc. All rights reserved.
Command input
Address input
Command input
Address input
Bus Operation