MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet - Page 18

• Manufacturer Part Number: MT29F8G08FABWP
• Manufacturer: Micron Technology, Inc

Ready/Busy#
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
The R/B# output provides a hardware method of indicating the completion of a PRO-
GRAM/ERASE/READ operation. The signal is typically HIGH, and transitions to LOW
after the appropriate command is written to the device. The signal pin’s open-drain
driver enables multiple R/B# outputs to be OR-tied. The signal requires a pull-up resis-
tor for proper operation. The READ STATUS command can be used in place of R/B#.
Typically R/B# would be connected to an interrupt pin on the system controller. See
Figure 11 on page 19.
On the 8Gb MT29F8G08FAB, R/B# provides an indication for the 4Gb section enabled by
CE#, and R/B2# does the same for the 4Gb section enabled by CE2#. R/B# and R/B2# can
be tied together, or they can be used separately to provide independent indications for
each 4Gb section.
The combination of Rp and capacitive loading of the R/B# circuit determines the rise
time of the R/B# pin. The actual value used for Rp depends on the system timing
requirements. Large values of Rp cause R/B# to be delayed significantly. At the 10- to 90-
percent points on the R/B# waveform, rise time is approximately two time constants
(TC).
The fall time of the R/B# signal is determined mainly by the output impedance of the
R/B# pin and the total load capacitance.
Refer to Figure 12 on page 19, and Figure 13 on page 20, which depict approximate Rp
values using a circuit load of 100pF.
The minimum value for Rp is determined by the output drive capability of the R/B# sig-
nal, the output voltage swing, and V
where R = Rp and C = total capacitive load
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
TC = R * C
18
CC
.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Bus Operation