MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet - Page 40

• Manufacturer Part Number: MT29F8G08FABWP
• Manufacturer: Micron Technology, Inc

Electrical Characteristics
Table 11:
Table 12:
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
Device
Parameter/Condition
MT29FxGxxxAx
MT29FxGxxxAx
Storage temperature
Short circuit output current, I/Os
Operating temperature
V
Supply voltage
CC
supply voltage
Absolute Maximum Ratings by Device
Recommended Operating Conditions
Stresses greater than those listed under “Absolute Maximum Ratings” may cause per-
manent damage to the device. This is a stress rating only, and functional operation of
the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not guaranteed. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
Commercial
Extended
T
V
V
STG
CC
IN
Supply voltage on any pin relative to Vss
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Symbol
40
Symbol
Vcc
Vss
t
t
A
A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–40
2.7
0
0
Electrical Characteristics
Typ
Min
–0.6
3.3
–6
—
—
0
5
©2004 Micron Technology, Inc. All rights reserved.
+150
Max
+4.6
Max
+70
+85
3.6
5
0
Unit
Unit
mA
°C
V
o
o
V
V
C
C