MT47H128M8HQ-3 L:G Micron Technology Inc, MT47H128M8HQ-3 L:G Datasheet - Page 101

• Manufacturer Part Number: MT47H128M8HQ-3 L:G
• Description: IC DDR2 SDRAM 1GBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H128M8HQ-3 L:G

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 128Mx8
• Density: 1Gb
• Address Bus: 17b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 56: Data Output Timing –
WRITE
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
LDQS#/LDQS/UDQ#/UDQS 3
All DQs collectively 4
DQ (first data valid)
DQ (last data valid)
DQS#/DQS or
Notes:
CK#
CK
WRITE bursts are initiated with a WRITE command. DDR2 SDRAM uses WL equal to RL
minus one clock cycle (WL = RL - 1CK) (see READ (page 73)). The starting column and
bank addresses are provided with the WRITE command, and auto precharge is either
enabled or disabled for that access. If auto precharge is enabled, the row being accessed
is precharged at the completion of the burst.
Note:
For the WRITE commands used in the following illustrations, auto precharge is disabled.
During WRITE bursts, the first valid data-in element will be registered on the first rising
edge of DQS following the WRITE command, and subsequent data elements will be reg-
istered on successive edges of DQS. The LOW state on DQS between the WRITE com-
mand and the first rising edge is known as the write preamble; the LOW state on DQS
following the last data-in element is known as the write postamble.
The time between the WRITE command and the first rising DQS edge is WL ±
Subsequent DQS positive rising edges are timed, relative to the associated clock edge,
as ±
T0 1
5.
6. The data valid window is derived for each DQS transition and is
7. DQ8, DQ9, DQ10, D11, DQ12, DQ13, DQ14, or DQ15.
1. READ command with CL = 3, AL = 0 issued at T0.
2.
3. DQ transitioning after DQS transitions define
4. All DQ must transition by
5.
6.
7.
8. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level,
t
DQSS.
t
t
DQS skew.
t
skew.
t
t
but to when the device begins to drive or no longer drives, respectively.
QH is derived from
DQSCK is the DQS output window relative to CK and is the long-term component of
AC is the DQ output window relative to CK and is the “long term” component of DQ
LZ (MIN) and
HZ (MAX) and
t
t
AC and
T1
DQSS is specified with a relatively wide range (25% of one clock cycle). All of
t LZ (MIN)
t
AC (MIN) are the first valid signal transitions.
t
t
AC (MAX) are the latest valid signal transitions.
DQSCK
T2
t
HP:
t LZ (MIN)
t RPRE
t
QH =
101
t
DQSQ after DQS transitions, regardless of
t DQSCK 2 (MIN)
T3
t
HP -
T3
T3
T3
T3n
t
Micron Technology, Inc. reserves the right to change products or specifications without notice.
QHS.
t AC 5 (MIN)
T3n
T3n
T3n
T4
T4
1Gb: x4, x8, x16 DDR2 SDRAM
T4
T4
t
DQSQ window.
T4n
T4n
t AC 5 (MAX)
T4n
T4n
T5
T5
t DQSCK 2 (MAX)
T5
T5
T5n
© 2004 Micron Technology, Inc. All rights reserved.
T5n
T5n
T5n
t
QH -
T6
t HZ (MAX)
T6
T6
T6
t HZ (MAX)
t
AC.
t
T6n
DQSQ.
t RPST
T6n
T6n
T6n
T7
t
DQSS.
WRITE