MC9S08DV32ACLF Freescale Semiconductor, MC9S08DV32ACLF Datasheet - Page 55

• Manufacturer Part Number: MC9S08DV32ACLF
• Description: IC MCU 32K FLASH 2K RAM 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08DV32ACLF

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: CAN, I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Processor Series: S08DV
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: CAN, I2C, SCI, SPI
• Number Of Programmable I/os: 26
• Operating Supply Voltage: 5.5 V
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08DZ60
• On-chip Adc: 12 bit, 10 channel
• Controller Family/series: HCS08
• No. Of I/o's: 39
• Ram Memory Size: 2KB
• Cpu Speed: 40MHz
• No. Of Timers: 2
• Digital Ic Case Style: LQFP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the Flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the Flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and remains enabled after completion of the burst
program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. If the next sequential address is the beginning of
a new row, the program time for that byte will be the standard time instead of the burst time. This is because
the high voltage to the array must be disabled and then enabled again. If a new burst command has not been
queued before the current command completes, then the charge pump will be disabled and high voltage
removed from the array.
A flowchart to execute the burst program operation is shown in
Freescale Semiconductor
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The next burst program command sequence has begun before the FCCF bit is set.
The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this Flash memory consists of 32 bytes. A new burst block begins
at each 32-byte address boundary.
Burst Program Execution
MC9S08DV60 Series Data Sheet, Rev 3
Figure
4-3.
Chapter 4 Memory
55