HD64F3048VTF8 Renesas Electronics America, HD64F3048VTF8 Datasheet - Page 630

• Manufacturer Part Number: HD64F3048VTF8
• Description: IC H8 MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048VTF8

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F3048VX8

Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
19.5
The H8/3048F’s on-chip flash memory is programmed and erased by software, using the CPU.
The flash memory operating modes and state transition diagram are shown in figure 19.8.
Program/erase modes comprise program mode, erase mode, program-verify mode, erase-verify
mode, and prewrite-verify mode. Transitions to these modes can be made by setting the P, E, PV,
and EV bits in the flash memory control register (FLMCR). Transition to the prewrite-verify mode
can also be made by clearing all the bits in FLMCR.
The flash memory cannot be read while being programmed or erased. The program that controls
the programming and erasing of the flash memory must be stored and executed in on-chip RAM or
in external memory. A description of each mode is given below, with recommended flowcharts
and sample programs for programming and erasing. High-reliability programming and erasing
algorithms are used, which double the programming or erase processing time for each step.
Section 19.8, Flash Memory Programming and Erasing Precautions (Dual-Power Supply), gives
further notes on programming and erasing.
Rev. 7.00 Sep 21, 2005 page 604 of 878
REJ09B0259-0700
Note: Do not perform simultaneous setting/clearing of the P, E, PV, and EV bits.
Figure 19.8 Flash Memory Program/Erase Operating Mode State Transition Diagram
Program mode
Programming and Erasing Flash Memory
P= 1
V
V
P= 0
PP
PP
= 12 V and
E= 1
E= 1
Erase mode
Normal ROM access mode
Prewrite-verify mode
E= 0
PV= 1
Program-verify
mode
V
V
PV= 0
PP
PP
E= 0
off
EV= 1
PP
= 12 V))
EV= 0
Erase-verify
mode
Flash memory
program/erase
operations