UPD70F3747GB-GAH-AX Renesas Electronics America, UPD70F3747GB-GAH-AX Datasheet - Page 924

• Manufacturer Part Number: UPD70F3747GB-GAH-AX
• Description: MCU 32BIT V850ES/HX3 64-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Hx3r

Specifications of UPD70F3747GB-GAH-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: CSI, I²C, UART/USART
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 51
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3.7 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

program command prohibit, read command prohibit, and boot block cluster rewrite prohibit setting functions are
enabled by default after shipment, and security can be set by rewriting via on-board/off-board programming. Each
security function can be used in combination with the others at the same time.
922
Blank check
Chip erasure
Block erasure
Program
Verify/checksum
Read
Security setting
Chip erase command
prohibit
Block erase
command prohibit
Program command
prohibit
Read command
prohibit
Boot block cluster
rewrite prohibit
setting
Note Chip erasure can be executed by specifying the entire memory area by using the block erase function.
The following table lists the security functions. The chip erase command prohibit, block erase command prohibit,
Function
Function
The erasure status of the entire memory is
checked.
The contents of the entire memory area
are erased all at once.
The contents of specified memory blocks
are erased.
Writing to specified addresses, and a verify
check to see if write level is secured are
performed.
Data read from the flash memory is
compared with data transferred from the
flash programmer.
Data written to the flash memory is read.
Use of the chip erase command, block
erase command, program command, and
read command is prohibited, and rewriting
of the boot area is prohibited.
Execution of block erase and chip erase commands on all the blocks is prohibited. Once prohibition is
set, setting of prohibition cannot be initialized because the chip erase command cannot be executed.
Execution of a block erase command on all blocks is prohibited. Setting of prohibition can be initialized
by execution of a chip erase command.
Execution of program and block erase commands on all the blocks is prohibited. Setting of prohibition
can be initialized by execution of the chip erase command.
Execution of a read command on all of the blocks is prohibited. Setting of the prohibition can be
initialized by execution of a chip erase command.
Boot block cluster from block 0 to a specified block can be protected. Once a boot block cluster has
been protected, it cannot be rewritten (or erased/written) afterward. Even if a chip erase command is
executed, the prohibited setting cannot be initialized. The maximum block that can be specified is as
follows.
μ
μ
PD70F3747:
PD70F3750, 70F3752, 70F3755, 70F3757: Block 127
Functional Outline
Table 26-3. Security Functions
CHAPTER 26 FLASH MEMORY
Table 26-2. Basic Functions
User’s Manual U18854EJ2V0UD
Function Outline
Block 63
On-Board/Off-Board
Programming
Support (√: Supported, ×: Not supported)
√
√
√
√
√
√
√
setting is changed from
(Supported only when
(Can be read by user
On-Board/Off-Board
enable to disable)
Programming
program)
×
√
Note
√
√
×
×
×