FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 121

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Transistors – RF Amplifier Transistors (Continued)
KSC388
FPNH10
MPSH10
MPSH11
BF199
KSC1393
KSC838
KSC1675
MPSH24
KSP24
MPSH34
BF240
TO-92 PNP Configuration
MPSH81
TO-92S NPN Configuration
KSC2786
KSC2669
KSC2787
Products
V
CEO
25
25
25
25
25
30
30
30
30
30
40
40
20
20
30
30
(V)
V
CBO
30
30
30
30
40
30
35
50
40
40
40
40
20
30
35
50
(V) V
EBO
4
3
3
3
4
4
4
5
4
4
4
4
3
4
4
5
(V)
Max (A)
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.05
0.1
I
C
(MHz)
1100
1100
300
650
650
650
400
100
150
400
400
500
600
400
100
150
f
T
2-116
Discrete Power Products –
Min
60
60
40
40
30
65
60
40
40
20
60
38
40
30
40
40
Max
200
180
240
240
225
240
240
240
–
–
–
–
–
–
–
–
h
@V
FE
12.5
10
10
10
10
10
12
10
10
15
10
10
12
CE
6
6
6
(V) @I
12.5
C
4
4
4
7
2
2
1
8
8
7
1
5
1
2
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.65
0.2
0.5
0.5
0.5
0.2
0.4
0.3
0.5
0.3
0.4
0.3
–
–
–
–
V
@I
CE (sat)
C
15
10
10
10
10
10
10
–
–
–
–
4
4
4
1
5
(mA) @I
B
1.5
0.4
0.4
0.4
0.5
–
–
–
–
–
5
1
1
1
1
1
(mA)