FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 126

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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JFETs (Continued)
2N5461
2N5462
TO-92S N-Channel
KSK596
Products
BV
(V)
40
40
20
GDS
Dissipation
Power
(mW)
350
350
100
P
D
Min (V)
1.8
–
1
Typ (V) Max (V) @ I
0.6
–
–
V
GS
7.5
1.5
9
(off)
D
1
1
1
(µA) @ V
2-121
Discrete Power Products –
15
15
DS
5
(V) Min (mA) Max (mA) @V
0.1
2
4
0.35
I
16
DSS
9
15
15
DS
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
1.5
–
2
GFS
5
6
–
R
(Ω)
–
–
–
DS
I
D
(µA)
(off)
–
–
–