FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 212

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
SPM™ (Smart Power Module)
F S A M 15 S H 60
(Continued)
A
Version
Voltage Rating (x 10)
H: High Switching Frequency
M: Medium Switching Frequency
S: Single-Power Supply
Current Rating
M: DIP-SPM (DIP Type of SPM PKG)
A: Option for Built-in Thermistor
B: Option for No-Thermistor
S: Divided N-Terminals (Sensorless)
Fairchild
8-19
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