FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 139

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Schottky Diodes and Rectifiers
1N5820
1N5821
1N5822
SB3100
SB330
SB340
SB350
SB360
SB380
SB5100
SB520
SB530
SB540
SB550
SB560
SB580
1N5817
1N5818
1N5819
SB1100
SB120
SB130
SB140
SB150
SB160
SB180
FMKA130L
FMKA140
S100
SS12
SS13
SS14
DO-201AD
DO-41
SMA
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Function
–
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
I
150
150
150
150
150
150
150
(A)
FSM
80
80
80
80
80
80
80
80
80
25
25
25
30
30
30
30
30
30
30
30
30
40
40
40
40
2-134
(°C/W)
R
28
28
28
40
40
40
40
40
40
25
25
25
25
25
25
25
80
80
80
80
80
80
80
80
80
80
88
88
88
88
θJA
–
–
Discrete Power Products –
V
100
100
100
100
RRM
(V)
20
30
40
30
40
50
60
80
20
30
40
50
60
80
20
30
40
20
30
40
50
60
80
30
40
20
30
40
I
F (AV)
(A)
3
3
3
3
3
3
3
3
3
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
Diodes and Rectifiers
FM
0.475
0.525
0.85
0.74
0.74
0.85
0.55
0.55
0.55
0.67
0.67
0.85
0.45
0.55
0.85
0.85
0.41
0.85
(V)
0.5
0.5
0.5
0.7
0.5
0.5
0.5
0.6
0.5
0.5
0.7
0.6
0.5
0.5
Max
(µA) @V
1000
1000
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
200
200
200
200
I
RM
Max
100
100
100
100
20
30
40
30
40
50
60
80
20
30
40
50
60
80
20
30
40
20
30
40
50
60
80
30
40
20
30
40
R
(V)